{"title":"低、中、高功率集成电路双极晶体管SPICE模型参数预确定的统一方法","authors":"K. O. Petrosjanc, I. Kharitonov, N.I. Rjabov","doi":"10.1109/ICMTS.1995.513975","DOIUrl":null,"url":null,"abstract":"To minimize measurement efforts a united methodology is proposed for getting SPICE model parameters for low, middle and high power bipolar devices with arbitrary layouts. The standard test structure technique is connected with the using of universal software tools for resistance numerical calculation. This approach is effectively applicable to the complex analog and/or digital ICs which are yet to be fabricated.","PeriodicalId":432935,"journal":{"name":"Proceedings International Conference on Microelectronic Test Structures","volume":"209 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"United methodology for pre-determination of bipolar transistor SPICE model parameters for low, middle and high power ICs\",\"authors\":\"K. O. Petrosjanc, I. Kharitonov, N.I. Rjabov\",\"doi\":\"10.1109/ICMTS.1995.513975\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To minimize measurement efforts a united methodology is proposed for getting SPICE model parameters for low, middle and high power bipolar devices with arbitrary layouts. The standard test structure technique is connected with the using of universal software tools for resistance numerical calculation. This approach is effectively applicable to the complex analog and/or digital ICs which are yet to be fabricated.\",\"PeriodicalId\":432935,\"journal\":{\"name\":\"Proceedings International Conference on Microelectronic Test Structures\",\"volume\":\"209 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-03-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1995.513975\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1995.513975","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
United methodology for pre-determination of bipolar transistor SPICE model parameters for low, middle and high power ICs
To minimize measurement efforts a united methodology is proposed for getting SPICE model parameters for low, middle and high power bipolar devices with arbitrary layouts. The standard test structure technique is connected with the using of universal software tools for resistance numerical calculation. This approach is effectively applicable to the complex analog and/or digital ICs which are yet to be fabricated.
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