C. Hsu, R. P. Huang, W. Lin, C. Huang, Y. Hsieh, W. Tsao, C. H. Chen, Y. M. Lin, T. Hung, H. Hsu, C. H. Wang, J. Y. Wu
{"title":"在28nm技术节点上减少替代金属栅铝化学机械抛光的微划痕","authors":"C. Hsu, R. P. Huang, W. Lin, C. Huang, Y. Hsieh, W. Tsao, C. H. Chen, Y. M. Lin, T. Hung, H. Hsu, C. H. Wang, J. Y. Wu","doi":"10.1109/IITC.2012.6251583","DOIUrl":null,"url":null,"abstract":"The defectivity control of replacement metal gate (RMG) chemical mechanical polishing was important for high-k metal gate (HKMG) process. Micro-scratches of RMG CMP easily caused shorting or open of devices. In this study, the micro-scratch reduction of aluminum chemical mechanical polishing (AlCMP) has been investigated to provide solutions for preventing the formation of micro-scratches. Micro-scratches can be reduced by implementing soft pads at platen 2 and platen 3, pad cleaning chemical, and optimized post cleaning condition. Soft pads can reduce micro-scratch levels of AlCMP process, especially at platen 2. However, AlCMP with soft pads easily suffer serious dishing or erosion. Therefore, the balance between micro-scratches and dishing or erosion was crucial for pad selection of AlCMP. Besides, removal of pad stain was also important. Pad stain removed by pad cleaning chemical could get a lower micro-scratch level of AlCMP. In addition to polishing process, post cleaning process was a source of micro-scratch for AlCMP. An unsuitable post cleaning condition caused a counter effect of micro-scratch reduction.","PeriodicalId":165741,"journal":{"name":"2012 IEEE International Interconnect Technology Conference","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Micro-scratch reduction of replacement metal gate aluminum chemical mechanical polishing at 28nm technology node\",\"authors\":\"C. Hsu, R. P. Huang, W. Lin, C. Huang, Y. Hsieh, W. Tsao, C. H. Chen, Y. M. Lin, T. Hung, H. Hsu, C. H. Wang, J. Y. Wu\",\"doi\":\"10.1109/IITC.2012.6251583\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The defectivity control of replacement metal gate (RMG) chemical mechanical polishing was important for high-k metal gate (HKMG) process. Micro-scratches of RMG CMP easily caused shorting or open of devices. In this study, the micro-scratch reduction of aluminum chemical mechanical polishing (AlCMP) has been investigated to provide solutions for preventing the formation of micro-scratches. Micro-scratches can be reduced by implementing soft pads at platen 2 and platen 3, pad cleaning chemical, and optimized post cleaning condition. Soft pads can reduce micro-scratch levels of AlCMP process, especially at platen 2. However, AlCMP with soft pads easily suffer serious dishing or erosion. Therefore, the balance between micro-scratches and dishing or erosion was crucial for pad selection of AlCMP. Besides, removal of pad stain was also important. Pad stain removed by pad cleaning chemical could get a lower micro-scratch level of AlCMP. In addition to polishing process, post cleaning process was a source of micro-scratch for AlCMP. An unsuitable post cleaning condition caused a counter effect of micro-scratch reduction.\",\"PeriodicalId\":165741,\"journal\":{\"name\":\"2012 IEEE International Interconnect Technology Conference\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-06-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Interconnect Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC.2012.6251583\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Interconnect Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC.2012.6251583","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Micro-scratch reduction of replacement metal gate aluminum chemical mechanical polishing at 28nm technology node
The defectivity control of replacement metal gate (RMG) chemical mechanical polishing was important for high-k metal gate (HKMG) process. Micro-scratches of RMG CMP easily caused shorting or open of devices. In this study, the micro-scratch reduction of aluminum chemical mechanical polishing (AlCMP) has been investigated to provide solutions for preventing the formation of micro-scratches. Micro-scratches can be reduced by implementing soft pads at platen 2 and platen 3, pad cleaning chemical, and optimized post cleaning condition. Soft pads can reduce micro-scratch levels of AlCMP process, especially at platen 2. However, AlCMP with soft pads easily suffer serious dishing or erosion. Therefore, the balance between micro-scratches and dishing or erosion was crucial for pad selection of AlCMP. Besides, removal of pad stain was also important. Pad stain removed by pad cleaning chemical could get a lower micro-scratch level of AlCMP. In addition to polishing process, post cleaning process was a source of micro-scratch for AlCMP. An unsuitable post cleaning condition caused a counter effect of micro-scratch reduction.
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