源/漏(S/D)硼扩散的栅极-氧化物降解

1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216) Pub Date : 1998-06-09 DOI:10.1109/VLSIT.1998.689255

K.P. Cheung, C. Chang, J. Colonell, W. Lai, C. Liu, R. Liu, C. Pai, C. Rafferty, H. Vaidya, J. Clemens

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引用次数: 0

摘要

硼从p/sup +/-聚栅极扩散到薄栅极氧化物不仅会导致晶体管性能下降，还会降低薄栅极氧化物的可靠性。这个问题已被广泛研究。由于p-MOSFET的S/D中使用了高浓度的硼，长期以来人们一直推测S/D中硼的扩散也会导致栅-氧化物可靠性问题。然而，这种退化模式从未被报道过。在本文中，我们报告了这种降解的明确证据，并表明硼从S/D扩散限制了间隔层厚度的缩放。

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Gate-oxide degradation from source/drain (S/D) boron diffusion

Boron diffusion from p/sup +/-poly gate through thin gate oxide not only causes a transistor to degrade, but also reduces the reliability of the thin gate-oxide. This problem has been studied extensively. Since high concentration of boron is used in the S/D of p-MOSFET, it has long been speculated that boron diffusion from S/D can also cause gate-oxide reliability problem. However, such a degradation mode has never been reported. In this paper, we report clear evidence of such degradation and show that boron diffusion from S/D sets a limit to spacer thickness scaling.

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1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216)

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