化学镀镍用于LDI的晶圆碰撞技术

J. Kim, Y.-N. Kim, J. Lee, J. Park, H. Kim, J.-O. Kim
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引用次数: 1

摘要

作为低成本晶圆碰撞工艺的一部分,在焊敷之前,化学镍层已被用于在铝键合垫上提供碰撞下金属化。最近,它在LDI(LCD for Drive IC)型器件的晶圆碰撞中也得到了越来越多的应用。然而,镍的镀液稳定性与钝化孔尺寸密切相关,限制了化学镀镍在LDI晶圆碰撞中的应用。研究了稳定剂浓度、温度和pH等镍浴参数对化学碰撞镍形成的影响,并提出了碰撞镍的最佳工艺条件。利用光学显微镜和厚度测定仪测量了凹凸表面和高度分布,对凹凸质量进行了估计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Wafer bumping technology for LDI application by electroless nickel plating
Electroless nickel layer has been used to provide an under bump metallization on the aluminum bond pads, as part of low cost wafer bumping process, prior to solder deposition. Recently, it has also found increasing use in wafer bumping for LDI(LCD for Drive IC) type device. However, the application of electroless nickel to the LDI wafer bumping is limited by the fact that bath stability of nickel is closely related with passivation opening size. In the present work, the effects of nickel bath parameters of stabilizer concentration, temperature and pH on the formation of electroless nickel bump have been investigated and optimum process conditions for LDI bumping were suggested. The measurements of bump surface and height distribution have been performed for the bump quality estimation by optical microscope and thickness profiler.
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