{"title":"一个紧凑的5.6 GHz低噪声放大器与新的片上增益可控有源平衡","authors":"M. Rajashekharaiah, P. Upadhyaya, D. Heo","doi":"10.1109/WMED.2004.1297375","DOIUrl":null,"url":null,"abstract":"A dual gain low noise amplifier for a 5.6 GHz ISM band direct conversion receiver, has been designed using a TSMC 0.25 /spl mu/m CMOS process and features a gain controllable on-chip active balun. The LNA provides gains of 19.5 dB and 12 dB in the two modes with 50% power savings in the low gain mode, while a noise figure of 3.1 dB and an IIP3 of -11.5 dBm have been achieved. A simple and novel gain control technique has been adopted and the gain control circuitry has been integrated with the balun.","PeriodicalId":296968,"journal":{"name":"2004 IEEE Workshop on Microelectronics and Electron Devices","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":"{\"title\":\"A compact 5.6 GHz low noise amplifier with new on-chip gain controllable active balun\",\"authors\":\"M. Rajashekharaiah, P. Upadhyaya, D. Heo\",\"doi\":\"10.1109/WMED.2004.1297375\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A dual gain low noise amplifier for a 5.6 GHz ISM band direct conversion receiver, has been designed using a TSMC 0.25 /spl mu/m CMOS process and features a gain controllable on-chip active balun. The LNA provides gains of 19.5 dB and 12 dB in the two modes with 50% power savings in the low gain mode, while a noise figure of 3.1 dB and an IIP3 of -11.5 dBm have been achieved. A simple and novel gain control technique has been adopted and the gain control circuitry has been integrated with the balun.\",\"PeriodicalId\":296968,\"journal\":{\"name\":\"2004 IEEE Workshop on Microelectronics and Electron Devices\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"24\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 IEEE Workshop on Microelectronics and Electron Devices\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/WMED.2004.1297375\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 IEEE Workshop on Microelectronics and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WMED.2004.1297375","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A compact 5.6 GHz low noise amplifier with new on-chip gain controllable active balun
A dual gain low noise amplifier for a 5.6 GHz ISM band direct conversion receiver, has been designed using a TSMC 0.25 /spl mu/m CMOS process and features a gain controllable on-chip active balun. The LNA provides gains of 19.5 dB and 12 dB in the two modes with 50% power savings in the low gain mode, while a noise figure of 3.1 dB and an IIP3 of -11.5 dBm have been achieved. A simple and novel gain control technique has been adopted and the gain control circuitry has been integrated with the balun.
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