基于亲疏水处理的低温直接InP/SOI晶圆键合

26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI:10.1109/ICIPRM.2014.6880548

Kewei Gong, Changzheng Sun, B. Xiong, Yi Luo

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引用次数: 0

摘要

我们报道了一种基于亲疏水处理的InP/SOI晶圆直接键合的新方法，该方法只需要320°C的低退火温度。扫描声显微镜(SAM)的测量结果表明，所提出的处理有助于在晶圆对之间形成牢固的键。用破坏法测定了结合强度，用扫描电镜(SEM)对结合界面进行了评价。

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Low temperature direct InP/SOI wafer bonding based on hydrophilic/hydrophobic treatment

We report a novel method for direct InP/SOI wafer bonding based on hydrophilic/hydrophobic treatment, which requires only a low annealing temperature of 320°C. Scanning acoustic microscope (SAM) measurements show that the proposed treatment helps form a firm bond between the wafer pair. The bonding strength is measured with a destructive approach, and the bonding interface is evaluated by scanning electron microscope (SEM).

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26th International Conference on Indium Phosphide and Related Materials (IPRM)

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