一种新型混合累积/反转模式FD SOI MOSFET的设计与分析

1997 IEEE International SOI Conference Proceedings Pub Date : 1997-10-06 DOI:10.1109/SOI.1997.634952

F.L. Daun, D. Ioannou

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引用次数: 1

摘要

本文设计并分析了一种新型的全耗尽SOI MOSFET器件，该器件结合了反转模式器件和积累模式器件的优点:性能优于反转模式器件，击穿电压高于积累模式器件。此外，新器件具有更好的热载波可靠性。

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Design and analysis of a novel mixed accumulation/inversion mode FD SOI MOSFET

In this paper, a new fully-depleted SOI MOSFET device is designed and analyzed, which combines the advantages of both the inversion mode and the accumulation mode devices: its performance is better than the inversion mode device, and its breakdown voltage higher than the accumulation mode device. Additionally, the new device results in better hot carrier reliability.

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1997 IEEE International SOI Conference Proceedings

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