InAs/InP量子棒纳米线的光致发光极化和压电性能

26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI:10.1109/ICIPRM.2014.6880556

R. Anufriev, N. Chauvin, Jean-Baptiste Barakat, H. Khmissi, K. Naji, G. Patriarche, X. Letartre, M. Gendry, C. Bru-Chevallier

{"title":"InAs/InP量子棒纳米线的光致发光极化和压电性能","authors":"R. Anufriev, N. Chauvin, Jean-Baptiste Barakat, H. Khmissi, K. Naji, G. Patriarche, X. Letartre, M. Gendry, C. Bru-Chevallier","doi":"10.1109/ICIPRM.2014.6880556","DOIUrl":null,"url":null,"abstract":"Purely wurtzite InAs/InP quantum rod nanowires (QRod-NWs) emitting at 1.55 μm have been successfully grown on silicon substrates by VLS assisted molecular beam epitaxy. Microphotoluminescence studies of single QRod-NWs reveal a highly linearly polarized emission parallel to the nanowires axis. This very high degree of linear polarization (> 0.9) can be explained by the photonic nature of the NW structure. Moreover, these QRod-NWs reveal a broad peak with an asymmetric lineshape at 10K. From experimental and theoretical studies, we conclude that this feature is a consequence of a piezoelectric field induced by the strained InAs QRod.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"180 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photoluminescence polarization and piezoelectric properties of InAs/InP quantum rod-nanowires\",\"authors\":\"R. Anufriev, N. Chauvin, Jean-Baptiste Barakat, H. Khmissi, K. Naji, G. Patriarche, X. Letartre, M. Gendry, C. Bru-Chevallier\",\"doi\":\"10.1109/ICIPRM.2014.6880556\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Purely wurtzite InAs/InP quantum rod nanowires (QRod-NWs) emitting at 1.55 μm have been successfully grown on silicon substrates by VLS assisted molecular beam epitaxy. Microphotoluminescence studies of single QRod-NWs reveal a highly linearly polarized emission parallel to the nanowires axis. This very high degree of linear polarization (> 0.9) can be explained by the photonic nature of the NW structure. Moreover, these QRod-NWs reveal a broad peak with an asymmetric lineshape at 10K. From experimental and theoretical studies, we conclude that this feature is a consequence of a piezoelectric field induced by the strained InAs QRod.\",\"PeriodicalId\":181494,\"journal\":{\"name\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"180 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2014.6880556\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2014.6880556","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

利用VLS辅助分子束外延技术，成功地在硅衬底上生长出了波长为1.55 μm的纯纤锌矿InAs/InP量子棒纳米线(QRod-NWs)。单QRod-NWs的微光致发光研究揭示了平行于纳米线轴线的高度线极化发射。这种非常高的线偏振度(> 0.9)可以用NW结构的光子性质来解释。此外，这些QRod-NWs在10K处显示出具有不对称线形的宽峰。从实验和理论研究中，我们得出结论，这种特征是由应变InAs QRod引起的压电场的结果。

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Photoluminescence polarization and piezoelectric properties of InAs/InP quantum rod-nanowires

Purely wurtzite InAs/InP quantum rod nanowires (QRod-NWs) emitting at 1.55 μm have been successfully grown on silicon substrates by VLS assisted molecular beam epitaxy. Microphotoluminescence studies of single QRod-NWs reveal a highly linearly polarized emission parallel to the nanowires axis. This very high degree of linear polarization (> 0.9) can be explained by the photonic nature of the NW structure. Moreover, these QRod-NWs reveal a broad peak with an asymmetric lineshape at 10K. From experimental and theoretical studies, we conclude that this feature is a consequence of a piezoelectric field induced by the strained InAs QRod.

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26th International Conference on Indium Phosphide and Related Materials (IPRM)

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