一个平衡的高压IGBT设计，具有超动态的坚固性和面积高效的边缘终端

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694393

Ze Chen, Katsumi Nakamura, A. Nishii, T. Terashima, T. Kawakami

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引用次数: 12

摘要

本文设计了一种平衡式高压IGBT。提出的HV IGBT由三种技术组成:用于单元结构的宽单元间距CSTBTTM(III)，用于垂直结构的利用LPT(II)缓冲器的部分P集热器，以及一种新颖的面积高效边缘终端设计。我们将上述边缘终端设计称为“线性窄场限制环(LNFLR)”。4500v级平衡IGBT的实验结果表明，与传统的限域环(FLR)设计相比，该器件在边缘终端宽度减少50%的情况下保持了良好的动态坚固性。此外，优化制备工艺可以进一步拓宽LNFLR剂量的工艺窗口。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A balanced High Voltage IGBT design with ultra dynamic ruggedness and area-efficient edge termination

In this paper, a balanced High Voltage (HV) IGBT is presented. The proposed HV IGBT is composed of three technologies: Wide Cell Pitch CSTBTTM(III) for cell structure, Partial P collector utilizing LPT(II) buffer for vertical structure, and a novel area-efficient edge termination design. We called the above edge termination design “Linearly-narrowed Field Limiting Ring (LNFLR)”. The experiment results of a balanced 4500 V class IGBT show that the device maintains an excellent dynamic ruggedness with a 50% cut in edge termination width comparing to the conventional Field Limiting Ring (FLR) design. Moreover, optimizing fabrication process can further widen the process window for LNFLR dose.

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来源期刊

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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