BiCMOS h/sub /劣化:原因及电路解决方案

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1994-10-10 DOI:10.1109/BIPOL.1994.587893

C. McAndrew, I. Kizilyalli, J. Bude

{"title":"BiCMOS h/sub /劣化:原因及电路解决方案","authors":"C. McAndrew, I. Kizilyalli, J. Bude","doi":"10.1109/BIPOL.1994.587893","DOIUrl":null,"url":null,"abstract":"h/sub fe/ degradation decreases BiCMOS speed and reliability. This paper presents the physical mechanisms of h/sub fe/ degradation, and a new, simple circuit technique that increases BiCMOS reliability and allows BiCMOS technologies to have lower breakdown voltages.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"BiCMOS h/sub fe/ degradation: causes and circuit solution\",\"authors\":\"C. McAndrew, I. Kizilyalli, J. Bude\",\"doi\":\"10.1109/BIPOL.1994.587893\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"h/sub fe/ degradation decreases BiCMOS speed and reliability. This paper presents the physical mechanisms of h/sub fe/ degradation, and a new, simple circuit technique that increases BiCMOS reliability and allows BiCMOS technologies to have lower breakdown voltages.\",\"PeriodicalId\":373721,\"journal\":{\"name\":\"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1994.587893\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1994.587893","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

h/sub fe/劣化降低了BiCMOS的速度和可靠性。本文介绍了h/sub - fe/降解的物理机制，以及一种新的、简单的电路技术，可以提高BiCMOS的可靠性，并使BiCMOS技术具有更低的击穿电压。

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BiCMOS h/sub fe/ degradation: causes and circuit solution

h/sub fe/ degradation decreases BiCMOS speed and reliability. This paper presents the physical mechanisms of h/sub fe/ degradation, and a new, simple circuit technique that increases BiCMOS reliability and allows BiCMOS technologies to have lower breakdown voltages.

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Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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