L/sub / /spl sim/ 20nm mosfet中二维掺杂剖面效应的精确输运建模

T. Tanaka, H. Kanata, Y. Tagawa, S. Satoh, T. Sugii
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引用次数: 0

摘要

为了准确考虑二维掺杂物分布效应,我们通过比较nmosfet与铟或硼口袋植入物的输运模型进行了研究。我们的逆建模成功地提取了它们的掺杂物分布和DIBL效应的特征。它使我们能够评估广义流体动力学模型即使在小到L/sub / /spl / sim/ 20nm的mosfet中也是高度可靠的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Accurate transport modeling with 2D dopant profile effect in L/sub eff/ /spl sim/ 20 nm MOSFETs via inverse modeling
To accurately consider 2D dopant profile effect, we have studied transport modeling by comparing nMOSFETs with indium or boron pocket implant. Our inverse modeling has successfully extracted their features of dopant profiles and DIBL effects. It has enabled us to evaluate that the generalized hydrodynamic model is highly reliable even in smaller MOSFETs down to L/sub eff/ /spl sim/ 20 nm.
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