T. Tanaka, H. Kanata, Y. Tagawa, S. Satoh, T. Sugii
{"title":"L/sub / /spl sim/ 20nm mosfet中二维掺杂剖面效应的精确输运建模","authors":"T. Tanaka, H. Kanata, Y. Tagawa, S. Satoh, T. Sugii","doi":"10.1109/SISPAD.2003.1233667","DOIUrl":null,"url":null,"abstract":"To accurately consider 2D dopant profile effect, we have studied transport modeling by comparing nMOSFETs with indium or boron pocket implant. Our inverse modeling has successfully extracted their features of dopant profiles and DIBL effects. It has enabled us to evaluate that the generalized hydrodynamic model is highly reliable even in smaller MOSFETs down to L/sub eff/ /spl sim/ 20 nm.","PeriodicalId":220325,"journal":{"name":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Accurate transport modeling with 2D dopant profile effect in L/sub eff/ /spl sim/ 20 nm MOSFETs via inverse modeling\",\"authors\":\"T. Tanaka, H. Kanata, Y. Tagawa, S. Satoh, T. Sugii\",\"doi\":\"10.1109/SISPAD.2003.1233667\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"To accurately consider 2D dopant profile effect, we have studied transport modeling by comparing nMOSFETs with indium or boron pocket implant. Our inverse modeling has successfully extracted their features of dopant profiles and DIBL effects. It has enabled us to evaluate that the generalized hydrodynamic model is highly reliable even in smaller MOSFETs down to L/sub eff/ /spl sim/ 20 nm.\",\"PeriodicalId\":220325,\"journal\":{\"name\":\"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2003.1233667\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2003.1233667","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Accurate transport modeling with 2D dopant profile effect in L/sub eff/ /spl sim/ 20 nm MOSFETs via inverse modeling
To accurately consider 2D dopant profile effect, we have studied transport modeling by comparing nMOSFETs with indium or boron pocket implant. Our inverse modeling has successfully extracted their features of dopant profiles and DIBL effects. It has enabled us to evaluate that the generalized hydrodynamic model is highly reliable even in smaller MOSFETs down to L/sub eff/ /spl sim/ 20 nm.