ESD过程中电源电压稳定性的实验研究

Yang Xiu, R. Mertens, N. Thomson, E. Rosenbaum
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引用次数: 2

摘要

片上电源的完整性可能在上电ESD事件期间受到损害,例如系统级ESD。实验数据表明,电源完整性是轨夹增益、ESD响应速度和片上电源去耦电容大小的函数。结果还表明,无论轨夹响应速度如何,只要几个nH的封装电感就会导致片上电源短暂崩溃。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Experimental study of supply voltage stability during ESD
On-chip power supply integrity may be compromised during a power-on ESD event, e.g. system-level ESD. Experimental data are provided to show that the supply integrity is a function of the rail clamp gain, its speed of response to ESD, and the amount of on-chip supply decoupling capacitance. It is also demonstrated that just a few nH of package inductance can cause the on-chip supply to briefly collapse, regardless of the rail clamp response speed.
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