M. Huang, P. Lai, J. Xu, S. Zeng, G.Q. Li, Y. Cheng
{"title":"背表面氩轰击抑制金属氧化物半导体器件中热电子诱导的界面退化","authors":"M. Huang, P. Lai, J. Xu, S. Zeng, G.Q. Li, Y. Cheng","doi":"10.1109/HKEDM.1997.642339","DOIUrl":null,"url":null,"abstract":"A low-energy (550 eV) argon-ion beam was used to bombard directly the backsurface of polysilicon-gate metal-oxide-semiconductor (MOS) capacitors after the completion of all conventional processing steps. The effects of this extra step on the interface characteristics of the MOS capacitors before and after hot-electron injection were investigated. After the backsurface argon-ion bombardment, the MOS capacitors showed improved interface hardness against hot-electron-induced degradation. A turn-around behaviour was observed, indicating an optimal bombardment time should be used. The physical mechanism involved could possibly be stress compensation at the Si-SiO/sub 2/ interface induced by the backsurface bombardment.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"135 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment\",\"authors\":\"M. Huang, P. Lai, J. Xu, S. Zeng, G.Q. Li, Y. Cheng\",\"doi\":\"10.1109/HKEDM.1997.642339\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A low-energy (550 eV) argon-ion beam was used to bombard directly the backsurface of polysilicon-gate metal-oxide-semiconductor (MOS) capacitors after the completion of all conventional processing steps. The effects of this extra step on the interface characteristics of the MOS capacitors before and after hot-electron injection were investigated. After the backsurface argon-ion bombardment, the MOS capacitors showed improved interface hardness against hot-electron-induced degradation. A turn-around behaviour was observed, indicating an optimal bombardment time should be used. The physical mechanism involved could possibly be stress compensation at the Si-SiO/sub 2/ interface induced by the backsurface bombardment.\",\"PeriodicalId\":262767,\"journal\":{\"name\":\"1997 IEEE Hong Kong Proceedings Electron Devices Meeting\",\"volume\":\"135 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 IEEE Hong Kong Proceedings Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.1997.642339\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1997.642339","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Suppression of hot-electron-induced interface degradation in metal-oxide-semiconductor devices by backsurface argon bombardment
A low-energy (550 eV) argon-ion beam was used to bombard directly the backsurface of polysilicon-gate metal-oxide-semiconductor (MOS) capacitors after the completion of all conventional processing steps. The effects of this extra step on the interface characteristics of the MOS capacitors before and after hot-electron injection were investigated. After the backsurface argon-ion bombardment, the MOS capacitors showed improved interface hardness against hot-electron-induced degradation. A turn-around behaviour was observed, indicating an optimal bombardment time should be used. The physical mechanism involved could possibly be stress compensation at the Si-SiO/sub 2/ interface induced by the backsurface bombardment.
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