射频放大器模块通孔板级可靠性评估

R. Darveaux, Jicheng Yang, A. Syed, B. Buella, P. Villareal, W. Kang
{"title":"射频放大器模块通孔板级可靠性评估","authors":"R. Darveaux, Jicheng Yang, A. Syed, B. Buella, P. Villareal, W. Kang","doi":"10.1109/IEMT.2003.1225918","DOIUrl":null,"url":null,"abstract":"The reliability of RF PA module substrate vias was evaluated using nine different laminate constructions. Variables in the substrate construction included layer count, trace thickness, via wall thickness, via diameter, via plugging, via capping, core material, and process flow at the supplier. A daisy chain module was designed to simulate a typical over molded RF PA module. The body size was 10/spl times/10 mm, with 2 die, 20 components, and 34 LGA I/O pads. Daisy chain nets were formed through 2 via chains, and 1 SMD component chain. Via reliability was measured by temperature cycling at -55/spl deg/C <=> 125/spl deg/C, 2 cph, after pre-conditioning at Jedec L3/240/spl deg/C and L3/260/spl deg/C. Both package level and board level testing was conducted. In the package level tests, it was found that nearly all of the constructions passed the typical qualification requirement of 1000 temperature cycles. However, one construction had failures starting at 600 cycles due to cracks in the knee region of the substrate vias. This construction used a less robust manufacturing flow at the substrate supplier. Three of the nine constructions were evaluated in the board level tests. All three legs passed the 1000 temperature cycle requirement, with the first via failure observed at 1372 cycles. No 2nd level solder joint failures were observed before the test was terminated at 3779 cycles. This robust board level temperature cycling performance is due to large NSMD pads (0.8 mm/spl times/0.8 mm), and small die (1.0 mm/spl times/1.0 mm). Failure analysis was conducted on all test legs to understand crack initiation sites and crack growth paths in the substrate vias.","PeriodicalId":106415,"journal":{"name":"IEEE/CPMT/SEMI 28th International Electronics Manufacturing Technology Symposium, 2003. IEMT 2003.","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Board level reliability evaluation of RF PA module vias\",\"authors\":\"R. Darveaux, Jicheng Yang, A. Syed, B. Buella, P. Villareal, W. Kang\",\"doi\":\"10.1109/IEMT.2003.1225918\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The reliability of RF PA module substrate vias was evaluated using nine different laminate constructions. Variables in the substrate construction included layer count, trace thickness, via wall thickness, via diameter, via plugging, via capping, core material, and process flow at the supplier. A daisy chain module was designed to simulate a typical over molded RF PA module. The body size was 10/spl times/10 mm, with 2 die, 20 components, and 34 LGA I/O pads. Daisy chain nets were formed through 2 via chains, and 1 SMD component chain. Via reliability was measured by temperature cycling at -55/spl deg/C <=> 125/spl deg/C, 2 cph, after pre-conditioning at Jedec L3/240/spl deg/C and L3/260/spl deg/C. Both package level and board level testing was conducted. In the package level tests, it was found that nearly all of the constructions passed the typical qualification requirement of 1000 temperature cycles. However, one construction had failures starting at 600 cycles due to cracks in the knee region of the substrate vias. This construction used a less robust manufacturing flow at the substrate supplier. Three of the nine constructions were evaluated in the board level tests. All three legs passed the 1000 temperature cycle requirement, with the first via failure observed at 1372 cycles. No 2nd level solder joint failures were observed before the test was terminated at 3779 cycles. This robust board level temperature cycling performance is due to large NSMD pads (0.8 mm/spl times/0.8 mm), and small die (1.0 mm/spl times/1.0 mm). Failure analysis was conducted on all test legs to understand crack initiation sites and crack growth paths in the substrate vias.\",\"PeriodicalId\":106415,\"journal\":{\"name\":\"IEEE/CPMT/SEMI 28th International Electronics Manufacturing Technology Symposium, 2003. IEMT 2003.\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-07-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE/CPMT/SEMI 28th International Electronics Manufacturing Technology Symposium, 2003. IEMT 2003.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEMT.2003.1225918\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/CPMT/SEMI 28th International Electronics Manufacturing Technology Symposium, 2003. IEMT 2003.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMT.2003.1225918","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

采用9种不同的层压板结构对射频放大器模块基板通孔的可靠性进行了评估。基板结构中的变量包括层数、径迹厚度、通孔壁厚度、通孔直径、通孔堵塞、通孔封盖、芯材和供应商的工艺流程。设计了一个菊花链模块来模拟典型的过模射频PA模块。机身尺寸为10/spl倍/ 10mm, 2个模具,20个元器件,34个LGA I/O焊盘。雏菊链网由2条通孔链和1条SMD组件链组成。在Jedec L3/240/spl°C和L3/260/spl°C预处理后,通过-55/spl°C - 125/spl°C, 2 cph的温度循环来测量Via的可靠性。进行了封装级和板级测试。在封装级测试中,发现几乎所有的结构都通过了1000个温度循环的典型合格要求。然而,一种结构在600次循环时由于基板过孔膝盖区域的裂缝而失效。这种结构在基板供应商处使用了不太强大的制造流程。九个结构中的三个在板级测试中进行了评估。所有三个分支都通过了1000个温度循环的要求,第一个通过在1372个循环中观察到失败。在3779次循环结束之前,没有观察到第二级焊点失效。这种强大的板级温度循环性能是由于大型NSMD焊盘(0.8 mm/spl次/0.8 mm)和小模具(1.0 mm/spl次/1.0 mm)。对所有试验腿进行了失效分析,以了解裂纹在基体孔道中的起裂位置和裂纹扩展路径。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Board level reliability evaluation of RF PA module vias
The reliability of RF PA module substrate vias was evaluated using nine different laminate constructions. Variables in the substrate construction included layer count, trace thickness, via wall thickness, via diameter, via plugging, via capping, core material, and process flow at the supplier. A daisy chain module was designed to simulate a typical over molded RF PA module. The body size was 10/spl times/10 mm, with 2 die, 20 components, and 34 LGA I/O pads. Daisy chain nets were formed through 2 via chains, and 1 SMD component chain. Via reliability was measured by temperature cycling at -55/spl deg/C <=> 125/spl deg/C, 2 cph, after pre-conditioning at Jedec L3/240/spl deg/C and L3/260/spl deg/C. Both package level and board level testing was conducted. In the package level tests, it was found that nearly all of the constructions passed the typical qualification requirement of 1000 temperature cycles. However, one construction had failures starting at 600 cycles due to cracks in the knee region of the substrate vias. This construction used a less robust manufacturing flow at the substrate supplier. Three of the nine constructions were evaluated in the board level tests. All three legs passed the 1000 temperature cycle requirement, with the first via failure observed at 1372 cycles. No 2nd level solder joint failures were observed before the test was terminated at 3779 cycles. This robust board level temperature cycling performance is due to large NSMD pads (0.8 mm/spl times/0.8 mm), and small die (1.0 mm/spl times/1.0 mm). Failure analysis was conducted on all test legs to understand crack initiation sites and crack growth paths in the substrate vias.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信