一种新颖的6.4 /spl mu/m/sup 2/全CMOS SRAM单元，采用高性能的0.25 /spl mu/m一代CMOS技术，纵横比为0.63

1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216) Pub Date : 1998-06-09 DOI:10.1109/VLSIT.1998.689202

K.J. Kim, J. Youn, S. Kim, J. Kim, S.H. Hwang, K.T. Kim, Y. Shin

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引用次数: 1

摘要

只提供摘要形式。独特的6.4 /spl mu/m/sup 2/ 6Tr。SRAM单元采用先进的CMOS技术开发，实现0.25 /spl mu/m的设计规则，适用于高密度和高速应用。电池设计的纵横比非常小，仅为0.63。在布局上的特点是平行有源区和正交栅电极，都是条形的。在0.5 V下获得了稳定的电池操作。

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A novel 6.4 /spl mu/m/sup 2/ full-CMOS SRAM cell with aspect ratio of 0.63 in a high-performance 0.25 /spl mu/m-generation CMOS technology

Summary form only given. A unique 6.4 /spl mu/m/sup 2/ 6Tr. SRAM cell has been developed using an advanced CMOS technology implemented in 0.25 /spl mu/m design rule for high density and high speed applications. Very small aspect ratio of 0.63 has been achieved for the cell design. Special features in the layout are parallel active regions and orthogonal gate electrodes, all bar shape. Stable cell operation has been obtained at 0.5 V.

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来源期刊

1998 Symposium on VLSI Technology Digest of Technical Papers (Cat. No.98CH36216)

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