采用高堆叠量子点混合波导的微环谐振器波长选择滤波器

26th International Conference on Indium Phosphide and Related Materials (IPRM) Pub Date : 2014-05-11 DOI:10.1109/ICIPRM.2014.6880523

Y. Takei, A. Matsumoto, A. Matsushita, K. Akahane, Y. Matsushima, K. Utaka

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引用次数: 0

摘要

利用生长在InP (311)B衬底上的InAs/InGaAlAs量子点混合波导制备了双微环谐振器波长选择滤波器。在650℃低温下，采用ICP-RIE蚀刻和退火技术进行混炼。该器件在TE和TM模式下的输出功率对比分别为9.0 dB和8.6 dB。

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Micro-ring-resonator wavelength-selective filter using highly-stacked quantum dot intermixed waveguide

We fabricated a double micro-ring-resonator wavelength-selective filter using the waveguide fabricated by the intermixing of InAs/InGaAlAs quantum dots grown on an InP (311)B substrate. Intermixing was done by using ICP-RIE etching and annealing technique at a low temperature of 650°C. The output-power contrasts of the device were 9.0 dB and 8.6 dB for TE and TM modes, respectively.

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26th International Conference on Indium Phosphide and Related Materials (IPRM)

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