{"title":"SiGe异质结双极晶体管的早期电压","authors":"J. Yuan, J. Song","doi":"10.1109/HKEDM.1997.642342","DOIUrl":null,"url":null,"abstract":"An analytical equation of the Early voltage, including the neutral-base recombination effect, is evaluated. The general analytical equation is valid for SiGe bipolar transistors with a flat, trapezoid, linear, or stepped Ge profile in the base. The present model predictions are compared with other published results and experimental data. The agreement between this work and experimental data is excellent. The analytical predictions without taking into account neutral-base recombination are overestimated. The model predictions, taking into account 100% neutral-base recombination, however, gives a fixed normalized Early voltage of 0.5, independent of Ge grading.","PeriodicalId":262767,"journal":{"name":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-08-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Early voltage of SiGe heterojunction bipolar transistors\",\"authors\":\"J. Yuan, J. Song\",\"doi\":\"10.1109/HKEDM.1997.642342\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An analytical equation of the Early voltage, including the neutral-base recombination effect, is evaluated. The general analytical equation is valid for SiGe bipolar transistors with a flat, trapezoid, linear, or stepped Ge profile in the base. The present model predictions are compared with other published results and experimental data. The agreement between this work and experimental data is excellent. The analytical predictions without taking into account neutral-base recombination are overestimated. The model predictions, taking into account 100% neutral-base recombination, however, gives a fixed normalized Early voltage of 0.5, independent of Ge grading.\",\"PeriodicalId\":262767,\"journal\":{\"name\":\"1997 IEEE Hong Kong Proceedings Electron Devices Meeting\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-08-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 IEEE Hong Kong Proceedings Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/HKEDM.1997.642342\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 IEEE Hong Kong Proceedings Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.1997.642342","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Early voltage of SiGe heterojunction bipolar transistors
An analytical equation of the Early voltage, including the neutral-base recombination effect, is evaluated. The general analytical equation is valid for SiGe bipolar transistors with a flat, trapezoid, linear, or stepped Ge profile in the base. The present model predictions are compared with other published results and experimental data. The agreement between this work and experimental data is excellent. The analytical predictions without taking into account neutral-base recombination are overestimated. The model predictions, taking into account 100% neutral-base recombination, however, gives a fixed normalized Early voltage of 0.5, independent of Ge grading.
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