{"title":"通过减少双多晶硅电容器在经孔蚀刻过程中的充电损伤来提高产量","authors":"V. Beugin, M. Richard","doi":"10.1109/PPID.2003.1200924","DOIUrl":null,"url":null,"abstract":"The charge-up damage on polysilicon capacitors during via etch has been investigated in flash memory devices by varying aspect ratio, power, strip, surface ratio and etch process. A possible explanation of the damage is presented.","PeriodicalId":196923,"journal":{"name":"2003 8th International Symposium Plasma- and Process-Induced Damage.","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-04-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Yield improvement by reducing charge-up damage of double polysilicon capacitors during via etch\",\"authors\":\"V. Beugin, M. Richard\",\"doi\":\"10.1109/PPID.2003.1200924\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The charge-up damage on polysilicon capacitors during via etch has been investigated in flash memory devices by varying aspect ratio, power, strip, surface ratio and etch process. A possible explanation of the damage is presented.\",\"PeriodicalId\":196923,\"journal\":{\"name\":\"2003 8th International Symposium Plasma- and Process-Induced Damage.\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-04-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2003 8th International Symposium Plasma- and Process-Induced Damage.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PPID.2003.1200924\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2003 8th International Symposium Plasma- and Process-Induced Damage.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PPID.2003.1200924","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Yield improvement by reducing charge-up damage of double polysilicon capacitors during via etch
The charge-up damage on polysilicon capacitors during via etch has been investigated in flash memory devices by varying aspect ratio, power, strip, surface ratio and etch process. A possible explanation of the damage is presented.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
