L. Zhang, Y. Mitani, A. Kinoshita, S. Takeno, K. Suguro, I. Mizushima, S. Mori, K. Yamamoto, J. Koga, K. Hara, Y. Hayase, S. Ogata
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Direct observation of boron dopant fluctuation by site-specific scanning spreading resistance microscopy
For the first time, we observed the discrete distribution and fluctuation of active B dopants in scaled n-type MOSFETs (nFETs) and in various B-doped epilayers by the site-specific scanning spreading resistance microscopy (SSRM). The non-uniform B distribution observed in narrow and short-channel length nFETs may be the origin of threshold voltage fluctuations in nFETs. Significant B fluctuation at doping levels less than 2×1019 cm-3 was found in Si:B and Si:B/Si:P epilayers prepared at intermediate temperatures, indicating that this phenomenon is a particular characteristic of B dopants. The B fluctuation is attributed to segregation of B dopant, which depends on thermal diffusion and occurs even under thermal equivalent conditions without structural stress. Site-specific SSRM is demonstrated to be capable of observing discrete dopants in silicon.