{"title":"基于热流体、电路和电磁场模拟耦合的芯片上三维电源数值研究","authors":"Ayano Furue, S. Matsumoto","doi":"10.1109/3dic52383.2021.9687610","DOIUrl":null,"url":null,"abstract":"3D power supply on chip (3D power SoC), which integrates Si driver, GaN power device and passive devices realizes high efficiency at high frequency switching and high power density. However, miniaturization makes power supply high temperature, and it causes reduction in efficiency and lifetime of power supply. In this paper, we propose the optimum structure for stacking GaN power device and Si based IC circuit to 3D power SoC. We also discuss the optimum assembly technology through thermal-fluid, circuit, and electromagnetic field simulations.","PeriodicalId":120750,"journal":{"name":"2021 IEEE International 3D Systems Integration Conference (3DIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Numerical investigations for 3D power supply on chip by coupling of thermal-fluid, circuit, and electromagnetic field simulations\",\"authors\":\"Ayano Furue, S. Matsumoto\",\"doi\":\"10.1109/3dic52383.2021.9687610\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"3D power supply on chip (3D power SoC), which integrates Si driver, GaN power device and passive devices realizes high efficiency at high frequency switching and high power density. However, miniaturization makes power supply high temperature, and it causes reduction in efficiency and lifetime of power supply. In this paper, we propose the optimum structure for stacking GaN power device and Si based IC circuit to 3D power SoC. We also discuss the optimum assembly technology through thermal-fluid, circuit, and electromagnetic field simulations.\",\"PeriodicalId\":120750,\"journal\":{\"name\":\"2021 IEEE International 3D Systems Integration Conference (3DIC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 IEEE International 3D Systems Integration Conference (3DIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/3dic52383.2021.9687610\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE International 3D Systems Integration Conference (3DIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/3dic52383.2021.9687610","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
摘要
3D电源芯片(3D power SoC)集成了硅驱动器件、氮化镓功率器件和无源器件,实现了高效率的高频开关和高功率密度。然而,小型化使电源温度升高,导致电源效率和寿命降低。本文提出了将GaN功率器件和Si基IC电路叠加到3D功率SoC的最佳结构。并通过热流体、电路和电磁场模拟讨论了最佳装配工艺。
Numerical investigations for 3D power supply on chip by coupling of thermal-fluid, circuit, and electromagnetic field simulations
3D power supply on chip (3D power SoC), which integrates Si driver, GaN power device and passive devices realizes high efficiency at high frequency switching and high power density. However, miniaturization makes power supply high temperature, and it causes reduction in efficiency and lifetime of power supply. In this paper, we propose the optimum structure for stacking GaN power device and Si based IC circuit to 3D power SoC. We also discuss the optimum assembly technology through thermal-fluid, circuit, and electromagnetic field simulations.