极薄SOI (ETSOI)技术:过去、现在和未来

2010 IEEE International SOI Conference (SOI) Pub Date : 2010-11-18 DOI:10.1109/SOI.2010.5641473

K. Cheng, A. Khakifirooz, P. Kulkarni, S. Ponoth, J. Kuss, L. Edge, A. Kimball, S. Kanakasabapathy, S. Schmitz, A. Reznicek, T. Adam, H. He, S. Mehta, A. Upham, S. Seo, J. Herman, R. Johnson, Y. Zhu, P. Jamison, B. Haran, Z. Zhu, S. Fan, H. Bu, D. Sadana, P. Kozłowski, J. O’Neill, B. Doris, G. Shahidi

{"title":"极薄SOI (ETSOI)技术:过去、现在和未来","authors":"K. Cheng, A. Khakifirooz, P. Kulkarni, S. Ponoth, J. Kuss, L. Edge, A. Kimball, S. Kanakasabapathy, S. Schmitz, A. Reznicek, T. Adam, H. He, S. Mehta, A. Upham, S. Seo, J. Herman, R. Johnson, Y. Zhu, P. Jamison, B. Haran, Z. Zhu, S. Fan, H. Bu, D. Sadana, P. Kozłowski, J. O’Neill, B. Doris, G. Shahidi","doi":"10.1109/SOI.2010.5641473","DOIUrl":null,"url":null,"abstract":"As the mainstream bulk devices face formidable challenges to scale beyond 20nm node, there is an increasingly renewed interest in fully depleted devices for continued CMOS scaling. In this paper, we provide an overview of extremely thin SOI (ETSOI), a viable fully depleted device architecture for future technology. Barriers that prevented ETSOI becoming a mainstream technology in the past are specified and solutions to overcome those barriers are provided.","PeriodicalId":227302,"journal":{"name":"2010 IEEE International SOI Conference (SOI)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":"{\"title\":\"Extremely thin SOI (ETSOI) technology: Past, present, and future\",\"authors\":\"K. Cheng, A. Khakifirooz, P. Kulkarni, S. Ponoth, J. Kuss, L. Edge, A. Kimball, S. Kanakasabapathy, S. Schmitz, A. Reznicek, T. Adam, H. He, S. Mehta, A. Upham, S. Seo, J. Herman, R. Johnson, Y. Zhu, P. Jamison, B. Haran, Z. Zhu, S. Fan, H. Bu, D. Sadana, P. Kozłowski, J. O’Neill, B. Doris, G. Shahidi\",\"doi\":\"10.1109/SOI.2010.5641473\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As the mainstream bulk devices face formidable challenges to scale beyond 20nm node, there is an increasingly renewed interest in fully depleted devices for continued CMOS scaling. In this paper, we provide an overview of extremely thin SOI (ETSOI), a viable fully depleted device architecture for future technology. Barriers that prevented ETSOI becoming a mainstream technology in the past are specified and solutions to overcome those barriers are provided.\",\"PeriodicalId\":227302,\"journal\":{\"name\":\"2010 IEEE International SOI Conference (SOI)\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-11-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"23\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International SOI Conference (SOI)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.2010.5641473\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International SOI Conference (SOI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.2010.5641473","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 23

摘要

随着主流批量器件在20nm节点以上的扩展面临巨大挑战，人们对完全耗尽器件的持续CMOS扩展越来越感兴趣。在本文中，我们概述了极薄SOI (ETSOI)，这是一种可行的未来技术的全耗尽器件架构。指出了过去阻碍ETSOI成为主流技术的障碍，并提供了克服这些障碍的解决方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Extremely thin SOI (ETSOI) technology: Past, present, and future

As the mainstream bulk devices face formidable challenges to scale beyond 20nm node, there is an increasingly renewed interest in fully depleted devices for continued CMOS scaling. In this paper, we provide an overview of extremely thin SOI (ETSOI), a viable fully depleted device architecture for future technology. Barriers that prevented ETSOI becoming a mainstream technology in the past are specified and solutions to overcome those barriers are provided.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2010 IEEE International SOI Conference (SOI)

自引率

0.00%

发文量