GeSi Nanocrystals in SiO2 Matrix with Extended Photoresponse in Near Infrared

The films of SiGe nanocrystals in SiO2on Si substrate were obtained by co-sputtering Si, Ge, and SiO2followed by rapid thermal annealing. The films structure and morphology together with electrical and photoelectrical properties were studied by x-ray diffraction, transmission electron microscopy, current - voltage and spectral photocurrent measurements. The photocurrent spectra at 300, 200 and 100 K were correlated with results obtained from X-ray diffractograms and transmission electron microscopy. The photocurrent spectra show an extension in near infrared due to the enriching SiGe nanocrystals in Ge.