一种新的测试结构,以实现可编程逻辑阵列的分闸闪存单元

H. Om'mani, M. Tadayoni, N. Thota, I. Yue, N. Do
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引用次数: 2

摘要

我们开发了一种新颖的可配置逻辑阵列测试结构,使用高度可扩展的第三代分闸闪存单元,具有低功耗和快速配置时间的特点。这种分栅SuperFlash®配置元件(SCE)已经用90nm嵌入式Flash技术进行了演示。由此产生的SCE消除了对深奥的制造工艺、传感和SRAM电路的需求,并减少了fpga和cpld等可编程阵列(PA)的配置时间。此外,SCE固有地继承了SST的分栅闪存技术的优点,具有紧凑的面积,低电压读取操作,低功耗多对多擦除和源侧通道热电子(SSCHE)注入编程机制,以及卓越的可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A novel test structure to implement a programmable logic array using split-gate flash memory cells
We developed a novel configurable logic array test structure using a highly scalable 3rd generation split-gate flash memory cell that features low power and fast configuration time. This split-gate SuperFlash® configuration element (SCE) has been demonstrated with a 90nm embedded Flash technology. The resulting SCE eliminates the need for esoteric fabrication process, and sensing, and SRAM circuits and reduces configuration time for programmable arrays (PA) such as FPGAs and CPLDs. Additionally, SCE inherently ports the advantages of SST's split-gate Flash memory technology with compact area, low-voltage read operation, low-power poly-to-poly erase and source-side channel hot electron (SSCHE) injection programming mechanisms, along with superior reliability.
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