单片机嵌入式快闪存储技术的发展

H. Hidaka
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引用次数: 34

摘要

嵌入式快闪记忆体技术在MCU(微控制器单元)产品扩展应用的驱动下,对各种性能要求有了巨大的需求增长。用于汽车应用的高可靠性高温操作、用于智能卡的极低功耗嵌入式EEPROM功能以及用于医疗应用的超低电压操作是开发嵌入式闪存技术的驱动因素。随着不断发展的存储单元技术,通过开发具有优化的eFlash技术,存储接口和总线设计以及整个芯片设计方法的专用设计平台来解决性能/功耗权衡,通过分闸MONOS闪存技术实现了先进的MCU产品阵容,应用范围广泛,包括汽车和安全应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Evolution of embedded flash memory technology for MCU
Embedded flash memory technology has undergone tremendous growth of demands with various performance requirements driven by expanded applications of MCU (Micro Controller Unit) products. High temperature operations with highest reliability for auto-motive applications, very low power embedded EEPROM functions for smart-cards, and ultra low-voltage operations for medical applications are driving factors in developing embedded flash technologies. Together with evolving memory cell technology, resolving performance/power trade-offs by developing dedicated design platforms with optimized eFlash technology, memory interface & bus designs, and the whole chip design methodologies, has realized advanced MCU products line-ups by split-gate MONOS flash technology with a wide range of applied products including auto-motive and security applications.
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