固有的软自由旋转二极管高温操作

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694416

S. Matthias, S. Geissmann, M. Bellini, A. Kopta, Munaf T. A. Rahimo

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引用次数: 9

摘要

传统上，IGBT和二极管发展的主要驱动力是最小化静态和动态损耗。n基厚度的显著减少将产生这种情况，但是它也可能危及开关特性，导致二极管反向恢复期间的高过调电压。在本文中，我们提出了一种改进的场电荷提取(FCE)概念，该概念固有地实现了软反向恢复行为。新设计允许将二极管的n基厚度减少10%，同时仍然保持传统二极管的阻塞能力和柔软性。因此，工艺曲线和坚固性得到了显著改善。

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Inherently soft free-wheeling diode for high temperature operation

Traditionally, the major driver in IGBT and diode development is to minimize the static and dynamic losses. A significant reduction of the n-base thickness would yield this, however it can also jeopardize the switching characteristic leading to high overshoot voltages during diode reverse recovery. In this paper, we present an improved Field-Charge Extraction (FCE) concept that is achieving a soft reverse recovery behavior inherently. The new design allows for a 10% reduction of the thickness of the diode's n-base, while still maintaining the blocking capability and the softness of the conventional diode. Therefore, the technology curve and the ruggedness are improved significantly.

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2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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