{"title":"基于inp的共振隧穿高电子迁移率晶体管的新型电流-电压特性及其电路应用","authors":"K. Chen, K. Maezawa, M. Yamamoto","doi":"10.1109/IEDM.1995.499219","DOIUrl":null,"url":null,"abstract":"We report novel current-voltage characteristics in an InP-based resonant-tunneling high electron mobility transistor (RTHEMT). The RTHEMT incorporates a resonant-tunneling diode structure into the source region of a HEMT. A near-flat valley current is obtained in the current-voltage characteristics. This unique feature leads to the observation of negative transconductance throughout a wide range of source-drain bias. Using a simple circuit that combines an RTHEMT with a resistor load, we demonstrate frequency multipliers (both doubler and tripler) and a three-valued logic inverse literal gate.","PeriodicalId":137564,"journal":{"name":"Proceedings of International Electron Devices Meeting","volume":"100 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"Novel current-voltage characteristics of an InP-based resonant-tunneling high electron mobility transistor and their circuit applications\",\"authors\":\"K. Chen, K. Maezawa, M. Yamamoto\",\"doi\":\"10.1109/IEDM.1995.499219\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report novel current-voltage characteristics in an InP-based resonant-tunneling high electron mobility transistor (RTHEMT). The RTHEMT incorporates a resonant-tunneling diode structure into the source region of a HEMT. A near-flat valley current is obtained in the current-voltage characteristics. This unique feature leads to the observation of negative transconductance throughout a wide range of source-drain bias. Using a simple circuit that combines an RTHEMT with a resistor load, we demonstrate frequency multipliers (both doubler and tripler) and a three-valued logic inverse literal gate.\",\"PeriodicalId\":137564,\"journal\":{\"name\":\"Proceedings of International Electron Devices Meeting\",\"volume\":\"100 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1995.499219\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1995.499219","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Novel current-voltage characteristics of an InP-based resonant-tunneling high electron mobility transistor and their circuit applications
We report novel current-voltage characteristics in an InP-based resonant-tunneling high electron mobility transistor (RTHEMT). The RTHEMT incorporates a resonant-tunneling diode structure into the source region of a HEMT. A near-flat valley current is obtained in the current-voltage characteristics. This unique feature leads to the observation of negative transconductance throughout a wide range of source-drain bias. Using a simple circuit that combines an RTHEMT with a resistor load, we demonstrate frequency multipliers (both doubler and tripler) and a three-valued logic inverse literal gate.
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