{"title":"Al-Si-Cu/TiN/Ti接触p-n结降解的新机制","authors":"T. Yoshida, H. Kawahara, S. Ogawa","doi":"10.1109/RELPHY.1992.187678","DOIUrl":null,"url":null,"abstract":"A new degradation mechanism that involves time dependent p-n junction characteristics is described. It has been found that reverse bias leakage current of the p-n junctions increases during reverse bias and temperature aging stress. It it clarified that this p-n junction degradation is dependent on crystallinity of the Ti-Si interdiffused layer at the contact interface in the Al-Si-Cu/TiN/Ti/Si substrate structure. In the case of an amorphous Ti-Si layer, the degradation is caused by diffusion of positively ionized Ti enhanced by the applied electric field.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"206 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A new mechanism for degradation of Al-Si-Cu/TiN/Ti contacted p-n junction\",\"authors\":\"T. Yoshida, H. Kawahara, S. Ogawa\",\"doi\":\"10.1109/RELPHY.1992.187678\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new degradation mechanism that involves time dependent p-n junction characteristics is described. It has been found that reverse bias leakage current of the p-n junctions increases during reverse bias and temperature aging stress. It it clarified that this p-n junction degradation is dependent on crystallinity of the Ti-Si interdiffused layer at the contact interface in the Al-Si-Cu/TiN/Ti/Si substrate structure. In the case of an amorphous Ti-Si layer, the degradation is caused by diffusion of positively ionized Ti enhanced by the applied electric field.<<ETX>>\",\"PeriodicalId\":154383,\"journal\":{\"name\":\"30th Annual Proceedings Reliability Physics 1992\",\"volume\":\"206 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"30th Annual Proceedings Reliability Physics 1992\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.1992.187678\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th Annual Proceedings Reliability Physics 1992","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1992.187678","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new mechanism for degradation of Al-Si-Cu/TiN/Ti contacted p-n junction
A new degradation mechanism that involves time dependent p-n junction characteristics is described. It has been found that reverse bias leakage current of the p-n junctions increases during reverse bias and temperature aging stress. It it clarified that this p-n junction degradation is dependent on crystallinity of the Ti-Si interdiffused layer at the contact interface in the Al-Si-Cu/TiN/Ti/Si substrate structure. In the case of an amorphous Ti-Si layer, the degradation is caused by diffusion of positively ionized Ti enhanced by the applied electric field.<>
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