{"title":"具有金属栅极/高k介电堆和cmos兼容PdGe触点的反转型表面沟道In0.53]Ga{in0.47As金属氧化物半导体场效应晶体管","authors":"H. Chin, Xinke Liu, L. Tan, Y. Yeo","doi":"10.1109/VTSA.2009.5159330","DOIUrl":null,"url":null,"abstract":"We report the first demonstration of a surface channel inversiontype In<inf>0.53</inf>Ga<inf>0.47</inf>As n-MOSFET featuring gold-free palladium-germanium (PdGe) ohmic contacts and self-aligned S/D formed by silicon and phosphorus co-implantation. A gate stack comprising TaN/HfAlO/In<inf>0.53</inf>Ga<inf>0.47</inf>As is also featured. Excellent transistor output characteristics with high drain current on/off ratio of 10<sup>4</sup>, high peak electron mobility of 1420 cm<sup>2</sup>/Vs and peak transconductance of 142 mS/mm at gate length of 2 µm were demonstrated. In addition, the integration of low resistance PdGe ohmic contacts on In<inf>0.53</inf>Ga<inf>0.47</inf>As alleviates contamination concerns associated with the common use of gold-based contacts on In<inf>0.53</inf>Ga<inf>0.47</inf>As.","PeriodicalId":309622,"journal":{"name":"2009 International Symposium on VLSI Technology, Systems, and Applications","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-04-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Inversion-type surface channel In0.53]Ga{in0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts\",\"authors\":\"H. Chin, Xinke Liu, L. Tan, Y. Yeo\",\"doi\":\"10.1109/VTSA.2009.5159330\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report the first demonstration of a surface channel inversiontype In<inf>0.53</inf>Ga<inf>0.47</inf>As n-MOSFET featuring gold-free palladium-germanium (PdGe) ohmic contacts and self-aligned S/D formed by silicon and phosphorus co-implantation. A gate stack comprising TaN/HfAlO/In<inf>0.53</inf>Ga<inf>0.47</inf>As is also featured. Excellent transistor output characteristics with high drain current on/off ratio of 10<sup>4</sup>, high peak electron mobility of 1420 cm<sup>2</sup>/Vs and peak transconductance of 142 mS/mm at gate length of 2 µm were demonstrated. In addition, the integration of low resistance PdGe ohmic contacts on In<inf>0.53</inf>Ga<inf>0.47</inf>As alleviates contamination concerns associated with the common use of gold-based contacts on In<inf>0.53</inf>Ga<inf>0.47</inf>As.\",\"PeriodicalId\":309622,\"journal\":{\"name\":\"2009 International Symposium on VLSI Technology, Systems, and Applications\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-04-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 International Symposium on VLSI Technology, Systems, and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VTSA.2009.5159330\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Symposium on VLSI Technology, Systems, and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.2009.5159330","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Inversion-type surface channel In0.53]Ga{in0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts
We report the first demonstration of a surface channel inversiontype In0.53Ga0.47As n-MOSFET featuring gold-free palladium-germanium (PdGe) ohmic contacts and self-aligned S/D formed by silicon and phosphorus co-implantation. A gate stack comprising TaN/HfAlO/In0.53Ga0.47As is also featured. Excellent transistor output characteristics with high drain current on/off ratio of 104, high peak electron mobility of 1420 cm2/Vs and peak transconductance of 142 mS/mm at gate length of 2 µm were demonstrated. In addition, the integration of low resistance PdGe ohmic contacts on In0.53Ga0.47As alleviates contamination concerns associated with the common use of gold-based contacts on In0.53Ga0.47As.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
