金刚石动力SBD的高温操作

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD) Pub Date : 2013-05-26 DOI:10.1109/ISPSD.2013.6694477

H. Umezawa, Y. Kato, S. Shikata

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引用次数: 1

摘要

研制了厚场极板的垂直结构金刚石肖特基势垒二极管。采用30μm肖特基电极的金刚石VSBD即使在250°C下也能实现9.4mOhm-cm2和840V的低比导通电阻和反向电压。Baliga极限值(BVBD2/RonS)为75.1 MW/cm2，是目前金刚石二极管的最佳值。具有1000 μm肖特基电极的金刚石VSBD在250°C时显示出高正向电流和低电阻，分别大于5安培和0.6欧姆。估计SBD的寄生电阻小于0.04欧姆。

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High temperature operation of diamond power SBD

Vertical structured diamond Schottky barrier diodes with thick field plate have been developed. The diamond VSBD with 30μm Schottky electrode realizes low specific on-resistance and reverse voltage such as 9.4mOhm-cm² and 840V, respectively, even at 250°C. The Baliga's figure of limit (BV_BD²/R_onS) is 75.1 MW/cm², which is the best value in diamond diode at present. The diamond VSBD with 1,000μm Schottky electrode shows high forward current and low resistance such as more than 5 ampere and 0.6 Ohm, respectively, at 250°C. The estimated parasitic resistance of the SBD is less than 0.04 Ohm.

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2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

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