工艺变化及其对电路运行的影响

S. Natarajan, M. Breuer, S. Gupta
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引用次数: 72

摘要

利用从0.8 /spl mu/m CMOS工艺中获得的数据,研究了由于制造工艺变化而导致的电参数(如晶体管增益因子和互连电阻)的统计变化。说明了这些变化和相关性对电路运行的影响。实例表明,由于工艺变化加剧了串扰效应,电路延迟可以比平均值增加约100%。案例研究强调了制造和电路设计之间需要更紧密的耦合,以及基于工艺信息的新设计角的需要。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Process variations and their impact on circuit operation
The statistical variations in electrical parameters, such as transistor gain factors and interconnect resistances, due to variations in the manufacturing process are studied using data obtained from a 0.8 /spl mu/m CMOS process. The impact of these variations and correlations on circuit operation is illustrated. Examples show that circuit delay can increase from the mean by about 100% due to crosstalk effects aggravated by process variations. Case studies emphasize the need for a tighter coupling between fabrication and circuit design and the need for new design corners based on process information.
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