用Mn203浆料进行介电平面化

1997 Symposium on VLSI Technology Pub Date : 1997-06-10 DOI:10.1109/VLSIT.1997.623678

Kishii, Nakamura, Anmoto

{"title":"用Mn203浆料进行介电平面化","authors":"Kishii, Nakamura, Anmoto","doi":"10.1109/VLSIT.1997.623678","DOIUrl":null,"url":null,"abstract":"We have developed an MQO~ slurry for dielectric planarization for the first time. Our Mn2O3 slurry has 4 times the removal rate of conventional slurry. The removal rate for this slurry remains constant for between 1 wt% and 10 wt% solid concentration. Pad-conditioning-free polish was successfully realized. We demonstrated that this slurry is","PeriodicalId":414778,"journal":{"name":"1997 Symposium on VLSI Technology","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Dielectric Planarization Using Mn203 Slurry\",\"authors\":\"Kishii, Nakamura, Anmoto\",\"doi\":\"10.1109/VLSIT.1997.623678\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have developed an MQO~ slurry for dielectric planarization for the first time. Our Mn2O3 slurry has 4 times the removal rate of conventional slurry. The removal rate for this slurry remains constant for between 1 wt% and 10 wt% solid concentration. Pad-conditioning-free polish was successfully realized. We demonstrated that this slurry is\",\"PeriodicalId\":414778,\"journal\":{\"name\":\"1997 Symposium on VLSI Technology\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1997 Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIT.1997.623678\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1997 Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.1997.623678","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们首次研制了一种用于介质平面化的MQO~浆料。Mn2O3浆料的去除率是常规浆料的4倍。这种浆料的去除率在1 wt%和10 wt%的固体浓度之间保持恒定。成功实现了免垫面调理抛光。我们证明了这个浆液

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Dielectric Planarization Using Mn203 Slurry

We have developed an MQO~ slurry for dielectric planarization for the first time. Our Mn2O3 slurry has 4 times the removal rate of conventional slurry. The removal rate for this slurry remains constant for between 1 wt% and 10 wt% solid concentration. Pad-conditioning-free polish was successfully realized. We demonstrated that this slurry is

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1997 Symposium on VLSI Technology

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