sige通道超薄SOI PMOS器件的解析后门偏置阈值电压模型

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344577

J. Kuo, M. Tang, J. Sim

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摘要

本文报道了sigi通道超薄SOI PMOS器件的解析阈值电压模型。双鱼座的仿真结果证实，分析模型对阈值电压有较好的预测效果。根据解析公式，根据后门偏压的不同，SiGe沟道SOI PMOS器件可以在SiGe沟道的顶部或底部或场氧化物的顶部具有导通沟道。

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An analytical back gate bias dependent threshold voltage model for SiGe-channel ultra-thin SOI PMOS devices

This paper reports an analytical threshold voltage model for SiGe-channel ultra-thin SOI PMOS devices. As confirmed by the PISCES simulation results, the analytical model provides a good prediction on the threshold voltage. According to the analytical formula, depending on the back gate bias, the SiGe-channel SOI PMOS device may have a conduction channel at the top or the bottom of the SiGe channel or at the top of the field oxide.<>

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Proceedings of 1993 IEEE International SOI Conference

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