热载流子应力:老化建模与缺陷定位分析

2016 IEEE International Reliability Physics Symposium (IRPS) Pub Date : 2016-04-17 DOI:10.1109/IRPS.2016.7574546

G. Torrente, X. Federspiel, D. Rideau, F. Monsieur, C. Tavernier, J. Coignus, D. Roy, G. Ghibaudo

{"title":"热载流子应力:老化建模与缺陷定位分析","authors":"G. Torrente, X. Federspiel, D. Rideau, F. Monsieur, C. Tavernier, J. Coignus, D. Roy, G. Ghibaudo","doi":"10.1109/IRPS.2016.7574546","DOIUrl":null,"url":null,"abstract":"In this paper a complete TCAD model addressing Hot Carrier Degradation for Flash technology is presented and its validity range extended respect to our previous work. Using the correlation of drifting electrical parameters, a simple technique for the analysis of trap distribution location is presented and physical insights on defect shape evolution are provided at different stress conditions.","PeriodicalId":172129,"journal":{"name":"2016 IEEE International Reliability Physics Symposium (IRPS)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Hot carrier stress: Aging modeling and analysis of defect location\",\"authors\":\"G. Torrente, X. Federspiel, D. Rideau, F. Monsieur, C. Tavernier, J. Coignus, D. Roy, G. Ghibaudo\",\"doi\":\"10.1109/IRPS.2016.7574546\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper a complete TCAD model addressing Hot Carrier Degradation for Flash technology is presented and its validity range extended respect to our previous work. Using the correlation of drifting electrical parameters, a simple technique for the analysis of trap distribution location is presented and physical insights on defect shape evolution are provided at different stress conditions.\",\"PeriodicalId\":172129,\"journal\":{\"name\":\"2016 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-04-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2016.7574546\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2016.7574546","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

本文提出了一种完整的解决Flash技术热载流子退化的TCAD模型，并在前人的基础上扩展了该模型的有效范围。利用漂移电参数的相关性，提出了一种简单的陷阱分布位置分析技术，并提供了在不同应力条件下缺陷形状演变的物理见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Hot carrier stress: Aging modeling and analysis of defect location

In this paper a complete TCAD model addressing Hot Carrier Degradation for Flash technology is presented and its validity range extended respect to our previous work. Using the correlation of drifting electrical parameters, a simple technique for the analysis of trap distribution location is presented and physical insights on defect shape evolution are provided at different stress conditions.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2016 IEEE International Reliability Physics Symposium (IRPS)

自引率

0.00%

发文量