Wan Tatt Wai, Yong Foo Khong, Zakaria Nurhanani, Faiss Simon
{"title":"用螺旋钻法表征铜垫用钛钨阻挡层上的金属氧化物","authors":"Wan Tatt Wai, Yong Foo Khong, Zakaria Nurhanani, Faiss Simon","doi":"10.1109/IPFA.2016.7564330","DOIUrl":null,"url":null,"abstract":"Titanium-tungsten (TiW) barrier layers were treated with process chemicals like palladium sulfate (PdSO4), diluted hydrofluoric acid (DHF), O2 plasma etc and the metal oxides change post treatments were investigated. The changes of metal oxides on surface and inside the TiW layer were characterized with Auger surface scan and depth profiling. The dominant species were identified as tungsten oxide (W-O) and copper oxide (Cu-O). Qualitative chart featuring atomic peak intensity (%) in response to the thickness (min) were plotted to show the trends of both W-O and Cu-O across the samples treated with different conditions. DHF can etch away Cu-O but at the same time enhanced W-O. Cu-O was enhanced under slow wet/dried condition at ambient air and by O2 plasma while W-O is not affected in both conditions.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Auger method to characterize metal oxides on titanium tungsten barrier layer for copper pad\",\"authors\":\"Wan Tatt Wai, Yong Foo Khong, Zakaria Nurhanani, Faiss Simon\",\"doi\":\"10.1109/IPFA.2016.7564330\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Titanium-tungsten (TiW) barrier layers were treated with process chemicals like palladium sulfate (PdSO4), diluted hydrofluoric acid (DHF), O2 plasma etc and the metal oxides change post treatments were investigated. The changes of metal oxides on surface and inside the TiW layer were characterized with Auger surface scan and depth profiling. The dominant species were identified as tungsten oxide (W-O) and copper oxide (Cu-O). Qualitative chart featuring atomic peak intensity (%) in response to the thickness (min) were plotted to show the trends of both W-O and Cu-O across the samples treated with different conditions. DHF can etch away Cu-O but at the same time enhanced W-O. Cu-O was enhanced under slow wet/dried condition at ambient air and by O2 plasma while W-O is not affected in both conditions.\",\"PeriodicalId\":206237,\"journal\":{\"name\":\"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2016.7564330\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2016.7564330","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Auger method to characterize metal oxides on titanium tungsten barrier layer for copper pad
Titanium-tungsten (TiW) barrier layers were treated with process chemicals like palladium sulfate (PdSO4), diluted hydrofluoric acid (DHF), O2 plasma etc and the metal oxides change post treatments were investigated. The changes of metal oxides on surface and inside the TiW layer were characterized with Auger surface scan and depth profiling. The dominant species were identified as tungsten oxide (W-O) and copper oxide (Cu-O). Qualitative chart featuring atomic peak intensity (%) in response to the thickness (min) were plotted to show the trends of both W-O and Cu-O across the samples treated with different conditions. DHF can etch away Cu-O but at the same time enhanced W-O. Cu-O was enhanced under slow wet/dried condition at ambient air and by O2 plasma while W-O is not affected in both conditions.