用螺旋钻法表征铜垫用钛钨阻挡层上的金属氧化物

Wan Tatt Wai, Yong Foo Khong, Zakaria Nurhanani, Faiss Simon
{"title":"用螺旋钻法表征铜垫用钛钨阻挡层上的金属氧化物","authors":"Wan Tatt Wai, Yong Foo Khong, Zakaria Nurhanani, Faiss Simon","doi":"10.1109/IPFA.2016.7564330","DOIUrl":null,"url":null,"abstract":"Titanium-tungsten (TiW) barrier layers were treated with process chemicals like palladium sulfate (PdSO4), diluted hydrofluoric acid (DHF), O2 plasma etc and the metal oxides change post treatments were investigated. The changes of metal oxides on surface and inside the TiW layer were characterized with Auger surface scan and depth profiling. The dominant species were identified as tungsten oxide (W-O) and copper oxide (Cu-O). Qualitative chart featuring atomic peak intensity (%) in response to the thickness (min) were plotted to show the trends of both W-O and Cu-O across the samples treated with different conditions. DHF can etch away Cu-O but at the same time enhanced W-O. Cu-O was enhanced under slow wet/dried condition at ambient air and by O2 plasma while W-O is not affected in both conditions.","PeriodicalId":206237,"journal":{"name":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Auger method to characterize metal oxides on titanium tungsten barrier layer for copper pad\",\"authors\":\"Wan Tatt Wai, Yong Foo Khong, Zakaria Nurhanani, Faiss Simon\",\"doi\":\"10.1109/IPFA.2016.7564330\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Titanium-tungsten (TiW) barrier layers were treated with process chemicals like palladium sulfate (PdSO4), diluted hydrofluoric acid (DHF), O2 plasma etc and the metal oxides change post treatments were investigated. The changes of metal oxides on surface and inside the TiW layer were characterized with Auger surface scan and depth profiling. The dominant species were identified as tungsten oxide (W-O) and copper oxide (Cu-O). Qualitative chart featuring atomic peak intensity (%) in response to the thickness (min) were plotted to show the trends of both W-O and Cu-O across the samples treated with different conditions. DHF can etch away Cu-O but at the same time enhanced W-O. Cu-O was enhanced under slow wet/dried condition at ambient air and by O2 plasma while W-O is not affected in both conditions.\",\"PeriodicalId\":206237,\"journal\":{\"name\":\"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2016.7564330\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 23rd International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2016.7564330","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

采用硫酸钯(PdSO4)、稀释氢氟酸(DHF)、氧等离子体等工艺化学品对钛钨阻挡层进行处理,考察了处理后金属氧化物的变化。利用螺旋钻表面扫描和深度剖面分析表征了TiW层表面和层内金属氧化物的变化。优势种为氧化钨(W-O)和氧化铜(Cu-O)。绘制了原子峰强度(%)随厚度(min)变化的定性图,显示了不同处理条件下样品中W-O和Cu-O的变化趋势。DHF对Cu-O有腐蚀作用,但对W-O有增强作用。Cu-O在环境空气缓慢湿/干条件下和O2等离子体条件下增强,而W-O在两种条件下均不受影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Auger method to characterize metal oxides on titanium tungsten barrier layer for copper pad
Titanium-tungsten (TiW) barrier layers were treated with process chemicals like palladium sulfate (PdSO4), diluted hydrofluoric acid (DHF), O2 plasma etc and the metal oxides change post treatments were investigated. The changes of metal oxides on surface and inside the TiW layer were characterized with Auger surface scan and depth profiling. The dominant species were identified as tungsten oxide (W-O) and copper oxide (Cu-O). Qualitative chart featuring atomic peak intensity (%) in response to the thickness (min) were plotted to show the trends of both W-O and Cu-O across the samples treated with different conditions. DHF can etch away Cu-O but at the same time enhanced W-O. Cu-O was enhanced under slow wet/dried condition at ambient air and by O2 plasma while W-O is not affected in both conditions.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信