{"title":"触发不可逆栅介电退化的临界栅电压","authors":"V. Lo, K. Pey, C. Tung, D. Ang","doi":"10.1109/RELPHY.2007.369958","DOIUrl":null,"url":null,"abstract":"Using a multiple-stage constant-voltage stress (M-CVS) methodology, a critical gate voltage (V<sub>crit</sub>) is found to demarcate the post-breakdown (BD) gate leakage current (I<sub>g</sub>) evolution. For a gate voltage (V<sub>g</sub>) < V<sub>crit</sub>, I<sub>g</sub> digitally fluctuates with no apparent net increase. For V<sub>g</sub> > V<sub>crit</sub>, I<sub>g</sub> rapidly evolves into a stable high leakage state. V<sub>crit</sub> is found to decrease with decreasing oxide thickness (T<sub>ox</sub>), implying that it has a significant impact on I<sub>g</sub> degradation rate (dl<sub>g</sub>/dt) (Lombardo, 2003) at nominal operating voltages.","PeriodicalId":433104,"journal":{"name":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A Critical Gate Voltage Triggering Irreversible Gate Dielectric Degradation\",\"authors\":\"V. Lo, K. Pey, C. Tung, D. Ang\",\"doi\":\"10.1109/RELPHY.2007.369958\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using a multiple-stage constant-voltage stress (M-CVS) methodology, a critical gate voltage (V<sub>crit</sub>) is found to demarcate the post-breakdown (BD) gate leakage current (I<sub>g</sub>) evolution. For a gate voltage (V<sub>g</sub>) < V<sub>crit</sub>, I<sub>g</sub> digitally fluctuates with no apparent net increase. For V<sub>g</sub> > V<sub>crit</sub>, I<sub>g</sub> rapidly evolves into a stable high leakage state. V<sub>crit</sub> is found to decrease with decreasing oxide thickness (T<sub>ox</sub>), implying that it has a significant impact on I<sub>g</sub> degradation rate (dl<sub>g</sub>/dt) (Lombardo, 2003) at nominal operating voltages.\",\"PeriodicalId\":433104,\"journal\":{\"name\":\"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2007.369958\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2007.369958","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Critical Gate Voltage Triggering Irreversible Gate Dielectric Degradation
Using a multiple-stage constant-voltage stress (M-CVS) methodology, a critical gate voltage (Vcrit) is found to demarcate the post-breakdown (BD) gate leakage current (Ig) evolution. For a gate voltage (Vg) < Vcrit, Ig digitally fluctuates with no apparent net increase. For Vg > Vcrit, Ig rapidly evolves into a stable high leakage state. Vcrit is found to decrease with decreasing oxide thickness (Tox), implying that it has a significant impact on Ig degradation rate (dlg/dt) (Lombardo, 2003) at nominal operating voltages.
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