高压IGBT封装倒装组件协同设计/仿真

P. Rajaguru, C. Bailey, H. Lu, A. M. Aliyu, A. Castellazzi, V. Pathirana, N. Udugampola, T. Trajkovic, F. Udrea, P. Mitcheson, A. Elliott
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引用次数: 0

摘要

本文详细介绍了一种协同设计和建模方法,以优化倒装芯片组装参数,使整体封装和系统满足LED照明应用的性能和可靠性规范。在器件级建模和封装级建模之间采用协同设计方法,以增强信息流。作为该方法的一部分,对电学、热学和力学进行耦合预测,以减轻下填充介质击穿故障和焊料互连疲劳故障。研究人员选择了五种商业底填土来研究减轻底填土电击穿和焊点疲劳的材料性能的权衡。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Co-design/simulation of flip-chip assembly for high voltage IGBT packages
This paper details a co-design and modelling methodology to optimise the flip-chip assembly parameters so that the overall package and system meets performance and reliability specifications for LED lighting applications. A co-design methodology is employed between device level modelling and package level modelling in order enhance the flow of information. As part of this methodology, coupled electrical, thermal and mechniacal predictions are made in order to mitigate underfill dielectric breakdown failure and solder interconnect fatigue failure. Five commercial underfills were selected for investigating the trade-off in materials properties that mitigate underfill electrical breakdown and solder joint fatigue.
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