微带间转换回流路径的建模与分析

I. Ndip, F. Ohnimus, S. Guttowski, H. Reichl
{"title":"微带间转换回流路径的建模与分析","authors":"I. Ndip, F. Ohnimus, S. Guttowski, H. Reichl","doi":"10.1109/ESTC.2008.4684546","DOIUrl":null,"url":null,"abstract":"In this contribution, the return-current paths for single-ended microstrip-to-microstrip via transitions in conventional layer stack-ups are modeled and analyzed. Electromagnetic reliability (EMR) problems which occur in these layer stack-ups, because the return-currents are not properly managed are discussed. Finally, a layer stack-up with well defined return-current paths, which overcomes the limitations of traditional layer stack-ups, is proposed.","PeriodicalId":146584,"journal":{"name":"2008 2nd Electronics System-Integration Technology Conference","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-11-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Modeling and analysis of return-current paths for microstrip-to-microstrip via transitions\",\"authors\":\"I. Ndip, F. Ohnimus, S. Guttowski, H. Reichl\",\"doi\":\"10.1109/ESTC.2008.4684546\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this contribution, the return-current paths for single-ended microstrip-to-microstrip via transitions in conventional layer stack-ups are modeled and analyzed. Electromagnetic reliability (EMR) problems which occur in these layer stack-ups, because the return-currents are not properly managed are discussed. Finally, a layer stack-up with well defined return-current paths, which overcomes the limitations of traditional layer stack-ups, is proposed.\",\"PeriodicalId\":146584,\"journal\":{\"name\":\"2008 2nd Electronics System-Integration Technology Conference\",\"volume\":\"23 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-11-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 2nd Electronics System-Integration Technology Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESTC.2008.4684546\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 2nd Electronics System-Integration Technology Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESTC.2008.4684546","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

摘要

在这篇贡献中,通过传统层堆叠中的转换,对单端微带到微带的返回电流路径进行了建模和分析。讨论了由于回程电流管理不当而产生的电磁可靠性问题。最后,提出了一种具有良好定义的返回电流路径的层叠加,克服了传统层叠加的局限性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Modeling and analysis of return-current paths for microstrip-to-microstrip via transitions
In this contribution, the return-current paths for single-ended microstrip-to-microstrip via transitions in conventional layer stack-ups are modeled and analyzed. Electromagnetic reliability (EMR) problems which occur in these layer stack-ups, because the return-currents are not properly managed are discussed. Finally, a layer stack-up with well defined return-current paths, which overcomes the limitations of traditional layer stack-ups, is proposed.
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