亚100nm高k金属栅极GeOI pmosfet性能:Ge通道取向和源注入速度的影响

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI:10.1109/VTSA.2009.5159331

C. Le Royer, A. Pouydebasque, K. Romanjek, V. Barral, M. Vinet, J. Hartmann, E. Augendre, H. Grampeix, L. Lachal, C. Tabone, B. Previtali, R. Truche, F. Allain

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引用次数: 11

摘要

我们在这里报告了对GeOI pMOSFET的实验研究:除了窄通道GeOI pMOSFET中与宽通道相比+65%的迁移率增强外，由于改善了侧壁输运特性，< 100 >通道的取向输运首次在Ge(001)中进行了研究:与Si不同，与< 110 >通道取向相比，没有观察到电流增益。最后，提取弹道率(BR)和源注入速度(vinj)，表明Ge的vinj比Si高22%。

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Sub-100nm high-K metal gate GeOI pMOSFETs performance: Impact of the Ge channel orientation and of the source injection velocity

We report here experimental investigations on GeOI pMOSFET: Besides the +65% mobility enhancement in narrow channel GeOI pMOSFETs as compared to wide channels, attributed to improved sidewall transport properties, 〈100〉 channel orientation transport is investigated for the first time in Ge (001): unlike Si, no current gain is observed compared to 〈110〉 channel orientation. Finally, ballisticity rates (BR) and source injection velocities (vinj) were extracted, demonstrating 22% higher vinj in Ge than in Si.

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2009 International Symposium on VLSI Technology, Systems, and Applications

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