第二代14/16nm节点兼容应变ge pFINFET，性能优于先进的si沟道finfet

2016 IEEE Symposium on VLSI Technology Pub Date : 2016-06-14 DOI:10.1109/VLSIT.2016.7573368

J. Mitard, L. Witters, Y. Sasaki, H. Arimura, A. Schulze, R. Loo, L. Ragnarsson, A. Hikavyy, D. Cott, T. Chiarella, S. Kubicek, H. Mertens, R. Ritzenthaler, C. Vrancken, P. Favia, H. Bender, N. Horiguchi, K. Barla, D. Mocuta, A. Mocuta, N. Collaert, A. Thean

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引用次数: 19

摘要

据报道，采用优化的S/D结和RMG堆栈，在最先进的器件尺寸上实现了低于30nm的LG Fin-replacement应变锗pfinfet。当将sGe器件与来自相同14-16nm研发平台的同类器件(Ge与Si通道，FinFET与横向栅极)进行比较时，首次显示了竞争性能。在缩放器件特性上通道钝化效率的提高被视为进一步提高缩放Ge通道finfet性能的重要因素。

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A 2nd Generation of 14/16nm-node compatible strained-Ge pFINFET with improved performance with respect to advanced Si-channel FinFETs

Sub-30nm LG Fin-replacement strained-Germanium pFinFETs at state-of-art device dimensions are reported with optimized S/D junctions and RMG stack. Competitive performance is shown for the first time when comparing the sGe devices with counterparts from the same 14-16nm R&D platform (Ge vs Si channel, FinFET vs lateral Gate All around). Improvement in channel passivation efficiency at scaled device features is seen to be an important knob to further boost the performance of scaled Ge channel FINFETs.

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2016 IEEE Symposium on VLSI Technology

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