嵌入式sram的Alpha和Neutron SER及其新估计方法

T. Fukuda, S. Hayakawa, N. Shigyo
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引用次数: 3

摘要

对嵌入式sram的α和中子SERs进行了评价。从几代技术的结果来看,SER表示为扩散面积和器件临界电荷的函数,但收集效率的影响在几代技术中是恒定的。然后,介绍了与技术无关的通用曲线模型。此外,根据器件技术的未来趋势,定量估计了45纳米制程的SER趋势
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Alpha and Neutron SER of embedded-SRAM and Novel Estimation Method
Alpha and neutron SERs of embedded-SRAMs are evaluated. From the results for several technology generations, SER is expressed as a function of diffusion area and critical charge for devices, but the effect of collection efficiency is constant for the generations. Then, the technology independent SER model named universal curve is introduced. Moreover, SER trend to 45nm generation is quantitatively estimated based on the future trend of device technology
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