用于功率开关应用的800 V GaAs MESFET

Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95 Pub Date : 1995-05-23 DOI:10.1109/ISPSD.1995.515025

N. Wright, C. Johnson, A. O'Neill, M. Hossin, R. Gwilliam

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引用次数: 0

摘要

针对高速功率开关器件的需求，提出了一种技术上可行的解决方案。本文详细介绍了一种新的GaAs MESFET器件的设计，该器件能够在高达800 V的电压下工作，电流高达10 a，开关频率超过10 MHz。

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800 V GaAs MESFET for power switching applications

A technologically feasible solution to the need for high-speed power switching devices is presented. The paper details the design of a new GaAs MESFET device capable of operation at voltages up to 800 V, currents up to 10 A and switching frequencies in excess of 10 MHz.

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Proceedings of International Symposium on Power Semiconductor Devices and IC's: ISPSD '95

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