{"title":"用于测定MOS结构氧化物中电荷分布的测试结构","authors":"Y. Takahashi, S. Imaki, K. Ohnishi, M. Yoshikawa","doi":"10.1109/ICMTS.1995.513981","DOIUrl":null,"url":null,"abstract":"We propose a measurement method to obtain the charge distribution in the oxide layer of a MOS structure. We obtain various oxide thicknesses by gradually varying the etching time of the oxide layer (slanted etching). Using this method, we have determined the charge distribution in the oxide layer of MOS structures before and after ammonia annealing by measuring the mid-gap voltages of C-V curves.","PeriodicalId":432935,"journal":{"name":"Proceedings International Conference on Microelectronic Test Structures","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Test structure for determining the charge distribution in the oxide of MOS structure\",\"authors\":\"Y. Takahashi, S. Imaki, K. Ohnishi, M. Yoshikawa\",\"doi\":\"10.1109/ICMTS.1995.513981\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We propose a measurement method to obtain the charge distribution in the oxide layer of a MOS structure. We obtain various oxide thicknesses by gradually varying the etching time of the oxide layer (slanted etching). Using this method, we have determined the charge distribution in the oxide layer of MOS structures before and after ammonia annealing by measuring the mid-gap voltages of C-V curves.\",\"PeriodicalId\":432935,\"journal\":{\"name\":\"Proceedings International Conference on Microelectronic Test Structures\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-03-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings International Conference on Microelectronic Test Structures\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1995.513981\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings International Conference on Microelectronic Test Structures","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1995.513981","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Test structure for determining the charge distribution in the oxide of MOS structure
We propose a measurement method to obtain the charge distribution in the oxide layer of a MOS structure. We obtain various oxide thicknesses by gradually varying the etching time of the oxide layer (slanted etching). Using this method, we have determined the charge distribution in the oxide layer of MOS structures before and after ammonia annealing by measuring the mid-gap voltages of C-V curves.
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