基于相变模拟的PRAM电池特性研究

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003. Pub Date : 2003-09-29 DOI:10.1109/SISPAD.2003.1233674

Y. Kim, K. Lee, Won-young Chung, T. Kim, Y. Park, J. Kong

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引用次数: 11

摘要

本文提出了一种新的模拟方法来分析基于硫族化物的相变器件PRAM (phase-change Random Access Memory)的单元特性，PRAM是下一代非易失性存储器。利用新的仿真方法，分析了工艺变化的影响，工艺变化是影响PRAM单元运行的最敏感因素。

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Study on cell characteristics of PRAM using the phase-change simulation

In this paper, we present a new simulation methodology for analyzing cell characteristics of the chalcogenide based phase-change device, PRAM (Phase-change Random Access Memory), which is the future-generation non-volatile memory. Using the new simulation methodology, we analyze the effect of process variation, which is the most sensitive factor to operate the cell of PRAM.

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来源期刊

International Conference on Simulation of Semiconductor Processes and Devices, 2003. SISPAD 2003.

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