{"title":"SIMOX埋地氧化物的传导机制","authors":"J. Yap, T. Maung, J. Nee, E. Simic, J. E. Chung","doi":"10.1109/SOI.1993.344604","DOIUrl":null,"url":null,"abstract":"In this study, the electric-field, time, and temperature dependence of intrinsic SIMOX buried-oxide conduction has been characterized. Asymmetry was observed between positive and negative applied gate voltage. Two primary conduction regimes have been identified for both polarities: a high-field regime that appears to be due to Fowler-Nordheim tunneling with substantial apparent barrier-height lowering at both injecting interfaces, and a low-field regime likely due to time-dependent trapping current.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Conduction mechanisms through SIMOX buried oxide\",\"authors\":\"J. Yap, T. Maung, J. Nee, E. Simic, J. E. Chung\",\"doi\":\"10.1109/SOI.1993.344604\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, the electric-field, time, and temperature dependence of intrinsic SIMOX buried-oxide conduction has been characterized. Asymmetry was observed between positive and negative applied gate voltage. Two primary conduction regimes have been identified for both polarities: a high-field regime that appears to be due to Fowler-Nordheim tunneling with substantial apparent barrier-height lowering at both injecting interfaces, and a low-field regime likely due to time-dependent trapping current.<<ETX>>\",\"PeriodicalId\":308249,\"journal\":{\"name\":\"Proceedings of 1993 IEEE International SOI Conference\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1993 IEEE International SOI Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1993.344604\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1993 IEEE International SOI Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1993.344604","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this study, the electric-field, time, and temperature dependence of intrinsic SIMOX buried-oxide conduction has been characterized. Asymmetry was observed between positive and negative applied gate voltage. Two primary conduction regimes have been identified for both polarities: a high-field regime that appears to be due to Fowler-Nordheim tunneling with substantial apparent barrier-height lowering at both injecting interfaces, and a low-field regime likely due to time-dependent trapping current.<>
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