一种新的“多步”幂律TDDB寿命模型及硼对超薄氧化物TDDB的穿透效应

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual Pub Date : 2007-04-01 DOI:10.1109/RELPHY.2007.369957

P. Liao, C. Chen, C.J. Wang, K. Wu

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引用次数: 0

摘要

本文提出了超薄氧化物的“多步”幂律TDDB模型。氮浓度对p-FET中电压加速斜率的影响用硼渗透模型来模拟，电压加速斜率可以用“多阶”幂律TDDB模型很好地解释。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A New "Multi-step" Power-law TDDB Lifetime Model and Boron Penetration Effect on TDDB of Ultra Thin oxide

In this work, the "multi-step" power law TDDB model is proposed for ultra thin oxide. The nitrogen concentration effect on the voltage acceleration slope in p-FET is modeled by the boron penetration, and the voltage acceleration slope can be well explained by the "multi-step" power-law TDDB model.

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2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual

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