C. Kazmierski, N. Chimot, F. Jorge, A. Konczykowska, F. Blache, J. Decobert, F. Alexandre, A. Garreau, Richard Marins da Silva
{"title":"基于前置光相位开关的inp单片源80Gb/s多级BPSK实验","authors":"C. Kazmierski, N. Chimot, F. Jorge, A. Konczykowska, F. Blache, J. Decobert, F. Alexandre, A. Garreau, Richard Marins da Silva","doi":"10.1109/ICIPRM.2014.6880558","DOIUrl":null,"url":null,"abstract":"Improved-speed full-monolithic BPSK transmitter based on prefixed phase switching by fast Electro-Absorption Modulators has been realized on InP using a Selective Area Growth integrating circuit technology. It has been used in 80Gb/s multi-level BPSK format modulation experiments. Simplicity, speed scalability, ultra-small footprint and low power drive of the monolithic circuit are attractive for advanced format migration towards low-cost applications.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"80Gb/s multi-level BPSK experiment with an InP-monolithic source based on prefixed optical phase switching\",\"authors\":\"C. Kazmierski, N. Chimot, F. Jorge, A. Konczykowska, F. Blache, J. Decobert, F. Alexandre, A. Garreau, Richard Marins da Silva\",\"doi\":\"10.1109/ICIPRM.2014.6880558\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Improved-speed full-monolithic BPSK transmitter based on prefixed phase switching by fast Electro-Absorption Modulators has been realized on InP using a Selective Area Growth integrating circuit technology. It has been used in 80Gb/s multi-level BPSK format modulation experiments. Simplicity, speed scalability, ultra-small footprint and low power drive of the monolithic circuit are attractive for advanced format migration towards low-cost applications.\",\"PeriodicalId\":181494,\"journal\":{\"name\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-05-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"26th International Conference on Indium Phosphide and Related Materials (IPRM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.2014.6880558\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2014.6880558","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
80Gb/s multi-level BPSK experiment with an InP-monolithic source based on prefixed optical phase switching
Improved-speed full-monolithic BPSK transmitter based on prefixed phase switching by fast Electro-Absorption Modulators has been realized on InP using a Selective Area Growth integrating circuit technology. It has been used in 80Gb/s multi-level BPSK format modulation experiments. Simplicity, speed scalability, ultra-small footprint and low power drive of the monolithic circuit are attractive for advanced format migration towards low-cost applications.