新技术对软错误率的影响

A. Dixit, A. Wood
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引用次数: 303

摘要

本文介绍了微处理器新技术对微处理器软错误率的影响。这些结果是基于甲骨文公司(前身为太阳微系统公司)过去几年的中子束测试得出的。我们描述了如何进行测试以及如何使用测试结果来影响微处理器设计。当微处理器特征尺寸从180nm减小到65nm时,每比特的内存错误率下降,但我们的数据表明,在40nm时,这一趋势正好相反。我们将SER作为电源电压(Vdd)在1.2V到0.5V范围内的函数进行测量,数据显示SER随着Vdd的降低而显著增加。这一结果表明,动态电压频率缩放(DVFS),一种常用的微处理器能量降低技术,可能会导致微处理器可靠性的显著降低。数据还表明,使用反偏置技术的更节能的晶体管似乎不会显著影响微处理器的可靠性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The impact of new technology on soft error rates
This paper presents the impact of new microprocessor technology on microprocessor soft error rate (SER). The results are based on Oracle's (formerly Sun Microsystems) neutron beam testing over the past several years. We describe how the tests were conducted and how the test results are used to influence microprocessor design. As microprocessor feature sizes decreased from 180nm to 65nm, memory error rates per bit decreased, but our data indicates a reversal of this trend at 40nm. Flop error rates still appear to be decreasing, even at a 28nm feature size We measure SER as a function of power supply voltage (Vdd) over a range of 1.2V down to 0.5V, and the data shows SER significantly increases as Vdd decreases. This result implies that dynamic voltage frequency scaling (DVFS), a commonly used microprocessor energy reduction technique, could cause a significant decrease in microprocessor reliability. The data also show that more energy-efficient transistors using back bias technique do not appear to significantly impact microprocessor reliability.
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