{"title":"热载流子在BiCMOS晶体管中诱导HFE降解","authors":"C.J. Varker, D. Pettengill, W. Shiau, B. Reuss","doi":"10.1109/RELPHY.1992.187623","DOIUrl":null,"url":null,"abstract":"Experimental results are presented of an investigation designed to develop an understanding of the physical mechanisms and the process inputs causing reduced hot carrier reliability in BiCMOS npn transistors. The overall objective is to correlate and extract information on process module and device design during product development and to develop reliability-driven rules which can be used to reduce hot carrier degradation of the forward current gain and to improve overall transistor reliability. The results show the effects of the intrinsic base implant dose and energy as well as thermal history on hot-carrier-induced forward-current-gain degradation in BiCMOS npn transistors.<<ETX>>","PeriodicalId":154383,"journal":{"name":"30th Annual Proceedings Reliability Physics 1992","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1992-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Hot carrier induced HFE degradation in BiCMOS transistors\",\"authors\":\"C.J. Varker, D. Pettengill, W. Shiau, B. Reuss\",\"doi\":\"10.1109/RELPHY.1992.187623\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Experimental results are presented of an investigation designed to develop an understanding of the physical mechanisms and the process inputs causing reduced hot carrier reliability in BiCMOS npn transistors. The overall objective is to correlate and extract information on process module and device design during product development and to develop reliability-driven rules which can be used to reduce hot carrier degradation of the forward current gain and to improve overall transistor reliability. The results show the effects of the intrinsic base implant dose and energy as well as thermal history on hot-carrier-induced forward-current-gain degradation in BiCMOS npn transistors.<<ETX>>\",\"PeriodicalId\":154383,\"journal\":{\"name\":\"30th Annual Proceedings Reliability Physics 1992\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1992-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"30th Annual Proceedings Reliability Physics 1992\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.1992.187623\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"30th Annual Proceedings Reliability Physics 1992","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.1992.187623","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hot carrier induced HFE degradation in BiCMOS transistors
Experimental results are presented of an investigation designed to develop an understanding of the physical mechanisms and the process inputs causing reduced hot carrier reliability in BiCMOS npn transistors. The overall objective is to correlate and extract information on process module and device design during product development and to develop reliability-driven rules which can be used to reduce hot carrier degradation of the forward current gain and to improve overall transistor reliability. The results show the effects of the intrinsic base implant dose and energy as well as thermal history on hot-carrier-induced forward-current-gain degradation in BiCMOS npn transistors.<>
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
