A SOI LDMOS/CMOS/BJT technology for fully-integrated RF power amplifiers

This paper describes a SOI LDMOS/CMOS/BJT technology which can be used in portable wireless communication applications. This technology allows the complete integration of the front-end and baseband circuits for low-cost/low-power/high-volume single-chip transceiver implementation. The LDMOS transistors (0.35 /spl mu/m channel length, 3.8 /spl mu/m drift length, 4.5 GHz f/sub T/ and 20 V breakdown voltage), CMOS transistors (1.5 /spl mu/m channel length, 0.8/-1.2V threshold voltage), lateral NPN transistor (18 V BV/sub CBO/ and h/sub FE/ of 20), and high Q-factor (up to 6.1 at 900 MHz and 6.5 at 1.8 GHz) on-chip inductors are fabricated. A fully-functional high performance integrated power amplifier for 900 MHz wireless transceiver application is also demonstrated.