{"title":"HKMG mosfet中N和P BTI的一致物理框架","authors":"K. Joshi, S. Mukhopadhyay, N. Goel, S. Mahapatra","doi":"10.1109/IRPS.2012.6241840","DOIUrl":null,"url":null,"abstract":"A common framework of trap generation and trapping is used to explain Negative Bias Temperature Instability (NBTI) and Positive Bias Temperature Instability (PBTI) DC and AC stress/recovery data. NBTI is explained using trap generation in Si/SiON (IL) interface and SiON (IL) bulk, together with hole trapping in pre-existing bulk SiON (IL) traps. Interface trap generation and recovery can be fully explained using Reaction-Diffusion (RD) model. PBTI is explained using trap generation in SiON (IL)/HK interface and HK bulk, together with electron trapping in pre-existing bulk HK traps. Important similarities as well as differences between N and P BTI are highlighted.","PeriodicalId":341663,"journal":{"name":"2012 IEEE International Reliability Physics Symposium (IRPS)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"97","resultStr":"{\"title\":\"A consistent physical framework for N and P BTI in HKMG MOSFETs\",\"authors\":\"K. Joshi, S. Mukhopadhyay, N. Goel, S. Mahapatra\",\"doi\":\"10.1109/IRPS.2012.6241840\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A common framework of trap generation and trapping is used to explain Negative Bias Temperature Instability (NBTI) and Positive Bias Temperature Instability (PBTI) DC and AC stress/recovery data. NBTI is explained using trap generation in Si/SiON (IL) interface and SiON (IL) bulk, together with hole trapping in pre-existing bulk SiON (IL) traps. Interface trap generation and recovery can be fully explained using Reaction-Diffusion (RD) model. PBTI is explained using trap generation in SiON (IL)/HK interface and HK bulk, together with electron trapping in pre-existing bulk HK traps. Important similarities as well as differences between N and P BTI are highlighted.\",\"PeriodicalId\":341663,\"journal\":{\"name\":\"2012 IEEE International Reliability Physics Symposium (IRPS)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-04-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"97\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 IEEE International Reliability Physics Symposium (IRPS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.2012.6241840\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE International Reliability Physics Symposium (IRPS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.2012.6241840","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A consistent physical framework for N and P BTI in HKMG MOSFETs
A common framework of trap generation and trapping is used to explain Negative Bias Temperature Instability (NBTI) and Positive Bias Temperature Instability (PBTI) DC and AC stress/recovery data. NBTI is explained using trap generation in Si/SiON (IL) interface and SiON (IL) bulk, together with hole trapping in pre-existing bulk SiON (IL) traps. Interface trap generation and recovery can be fully explained using Reaction-Diffusion (RD) model. PBTI is explained using trap generation in SiON (IL)/HK interface and HK bulk, together with electron trapping in pre-existing bulk HK traps. Important similarities as well as differences between N and P BTI are highlighted.
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